Chemical Control of Recombination at Semiconductor Interfaces

该项目得到了分析和表面化学计划的支持，重点是通过将部分元素直接共价连接到硅上而不需要中间氧化桥，来表征在硅表面产生的半导体/液体界面。加州理工学院化学系的内森·S·刘易斯教授和他的学生将使用伏安、微波电导和微分电容方法来表征这些界面的电子转移和光化学性质，这些界面不会因为氧化桥的存在而变得复杂。该项目旨在了解如何在这些改良的硅半导体/液体界面上控制电子转移的基本原理。硅是制造半导体器件的基本构件。尽管它在这类应用中普遍使用，但它的电子转移性质仍然知之甚少。这个研究小组由加州理工学院的内森·S·刘易斯教授领导，在理解半导体/液体界面的性质方面做出了开创性的贡献，例如电子转移速率与距离的关系。该项目使用独特的化学方法来评估半导体/液体界面的这种性质。该项目的实用价值在于它在太阳能转换方面具有许多实际应用的潜力。

This project, supported in the Analytical and Surface Chemistry Program, focusses on characterizing semiconductor/liquid interfaces created at silicon surfaces by covalently attaching moieties directly to silicon without an intervening oxide bridge. Professor Nathan S. Lewis and his students of the Department of Chemistry at the California Institute of Technology will employ voltammetric, microwave conductivity, and differential capacitance methods to characterize the electron transfer and photochemical properties of these interfaces that are not complicated by the presence of an oxide bridge. This project aims to understand the fundamentals of how electron transfer can be controlled at these modified silicon semiconductor/liquid interfaces. Silicon is the fundamental building block for constructing semiconductor devices. Despite its common use for such applications its electron transfer properties remain poorly understood. This research group, led by Professor Nathan S. Lewis at the California Institute of Technology, is making seminal contributions to the understanding of the properties of semiconductor/liquid interfaces such as the dependence of electron transfer rate on distance. This project uses unique chemistry to assess such properties of the semiconductor/liquid interface. The utility of this project lies in its potential for many practical applications in solar energy conversion.