Professional Master's Degree in Applied Physics - Internship in Regional Industry
Professional Master's Degree in Applied Physics - Internship in Regional Industry
批准号:
9705498
负责人:
Mark Holtz
金额:
$47.8万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-08-15 至 2001-07-31
中文摘要
9705498霍尔茨这笔赠款支持创建一项新的教育计划,以获得应用物理理学硕士学位。新的方法是在地区高科技半导体行业的两个长学期实习与应用物理课程和德克萨斯理工大学的外部选修课交织在一起。这些课程的目标是在本科学位的基础上再接再厉,重点学习半导体材料、工艺和制造的基本原理。该计划为学生提供培训,在一些世界上最先进的实验室,在国家需要的学科领域使用最先进的设备。这为他们在竞争激烈的就业市场上提供了至关重要的优势。这一努力将有助于产生替代方案,以扩大传统研究生培训之外的学术经验。%材料研究部的这项资助是首批授予的,旨在寻找创新的方法来整合研究和教育。它还由数学和物理科学局多学科活动办公室共同主办。***
英文摘要
9705498 Holtz This grant supports the creation of a new educational program which leads to a Master's of Science Degree in Applied Physics. The novel approach is to interweave two long-semester internships in the regional high-tech semiconductor industry with courses in applied physics and outside electives at Texas Tech. These are aimed at building on the undergraduate degree and are focused toward basic principles of semiconductor materials, processes, and fabrication. The program offers students training in some of the world's most sophisticated laboratories with state-of- the-art equipment in subject areas of national need. This provides them with a vital edge in a highly competitive job market. This effort will assist in producing alternatives for broadening the academic experience beyond traditional graduate training. %%% This grant from the Division of Materials Research is one of the first awarded in an attempt to find innovative methods to integrate research and education. It is also cosponsored by the Office of Multidisciplinary Activities of the Mathematical and Physical Sciences Directorate. ***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
MRI: Development of an Electron-Beam Deposition System with In Situ Surface Analysis
-
批准号:0420853
-
项目类别:Standard Grant
-
资助金额:$0.0万
-
财政年份:2004
-
负责人:Mark Holtz
-
依托单位:
Device Processing Studies of Aluminum-Rich AlGaN Superlattices
-
批准号:0323640
-
项目类别:Continuing Grant
-
资助金额:$42.0万
-
财政年份:2003
-
负责人:Mark Holtz
-
依托单位:
Fundamental Properties of GaAsN and InGaAsN - Toward Optoelectronic Applications
-
批准号:0070240
-
项目类别:Continuing Grant
-
资助金额:$24.0万
-
财政年份:2000
-
负责人:Mark Holtz
-
依托单位:
国内基金
海外基金
超对称可积系统:master对称、Cartan-Maurer方程
-
批准号:11505284
-
项目类别:青年科学基金项目
-
资助金额:18.0万元
-
批准年份:2015
-
负责人:田凯
-
依托单位: