MRI: Development of an Electron-Beam Deposition System with In Situ Surface Analysis
MRI:开发具有原位表面分析功能的电子束沉积系统
基本信息
- 批准号:0420853
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2004
- 资助国家:美国
- 起止时间:2004-08-15 至 2007-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this research is to develop an ultra high vacuum materials deposition and characterization system. The system will provide combined deposition and analysis capabilities not currently available at TTU, significantly enhancing our materials research and educational efforts. Development of these capabilities will have an immediate impact on numerous projects funded by NSF.Intellectual Merit: The system will be used to conduct basic and applied research in thin film deposition and surface analysis. In large bandgap materials, our recent work has demonstrated ultraviolet LEDs operating at wavelength 262 nm. New questions regard the influence of surface chemistry and metallization on contact formation. The development of microelectronic materials with high dielectric constant leads to questions on the importance of silicon gate-dielectric interface. Our nano-engineered energetic materials rely on interdiffusion reactions. To optimize structures for energy storage and release, improvements are needed in control over deposition and in situ characterization to study the reactions. MOEMS research involves micromirror development and basic studies of wear. Surface characterization will advance our efforts in stiction and friction remediation and extend our MOEMS research into of fatigue and failure. Broader Impact: This instrumentation impacts numerous ongoing research projects and enhances our interactions with industry and national laboratories. The scope of our studies is broad, and spans numerous areas in science and engineering. The TTU Nano Tech Center provides an interdisciplinary setting with excellent technical, team, and leadership building opportunities for postdoctoral researchers and students at all levels through research and courses conducted within Center facilities.
本研究旨在发展一套超高真空材料沉积与表征系统。该系统将提供TTU目前无法提供的综合沉积和分析能力,大大增强了我们的材料研究和教育工作。这些能力的发展将对NSF资助的许多项目产生直接影响。智力优势:该系统将用于进行薄膜沉积和表面分析的基础和应用研究。在大带隙材料中,我们最近的工作已经证明了紫外LED在波长262 nm处工作。新的问题涉及表面化学和金属化对接触形成的影响。随着高介电常数微电子材料的发展,硅栅-介质界面的重要性受到质疑。我们的纳米工程高能材料依赖于相互扩散反应。为了优化能量储存和释放的结构,需要改进对沉积的控制和原位表征以研究反应。MOEMS的研究涉及到磨损机理的研究和磨损的基础研究。表面表征将推进我们在静摩擦和摩擦修复方面的努力,并将我们的MOEMS研究扩展到疲劳和失效领域。更广泛的影响:该仪器影响了许多正在进行的研究项目,并增强了我们与行业和国家实验室的互动。我们的研究范围很广,跨越科学和工程的许多领域。TTU纳米技术中心通过中心设施内进行的研究和课程,为博士后研究人员和各级学生提供了一个跨学科的环境,具有出色的技术,团队和领导力建设机会。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Mark Holtz其他文献
Microfabricated liquid core waveguides for microanalysis systems
用于微量分析系统的微加工液芯波导
- DOI:
10.1109/icsens.2002.1037180 - 发表时间:
2002 - 期刊:
- 影响因子:0
- 作者:
R. Manor;A. Datta;A. Dhar;Mark Holtz;Jordan M. Berg;S. Gangopadhyay;P. Dasgupta;H. Temkin;V. Veeraraghavan;R. Vijayaraghavan;Tim Dallas - 通讯作者:
Tim Dallas
Absolute photoluminescence intensity in thin film solar cells
薄膜太阳能电池的绝对光致发光强度
- DOI:
10.1063/1.5064798 - 发表时间:
2019 - 期刊:
- 影响因子:3.2
- 作者:
C. Swartz;Sanjoy Paul;L. Mansfield;Mark Holtz - 通讯作者:
Mark Holtz
Mark Holtz的其他文献
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{{ truncateString('Mark Holtz', 18)}}的其他基金
Device Processing Studies of Aluminum-Rich AlGaN Superlattices
富铝 AlGaN 超晶格的器件加工研究
- 批准号:
0323640 - 财政年份:2003
- 资助金额:
-- - 项目类别:
Continuing Grant
Fundamental Properties of GaAsN and InGaAsN - Toward Optoelectronic Applications
GaAsN 和 InGaAsN 的基本特性 - 面向光电应用
- 批准号:
0070240 - 财政年份:2000
- 资助金额:
-- - 项目类别:
Continuing Grant
Professional Master's Degree in Applied Physics - Internship in Regional Industry
应用物理专业硕士学位 - 区域工业实习
- 批准号:
9705498 - 财政年份:1997
- 资助金额:
-- - 项目类别:
Continuing Grant
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