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MRI: Development of an Electron-Beam Deposition System with In Situ Surface Analysis

MRI: Development of an Electron-Beam Deposition System with In Situ Surface Analysis
MRI:开发具有原位表面分析功能的电子束沉积系统
批准号:
0420853
负责人:
Mark Holtz
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-15 至 2007-07-31

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中文摘要
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英文摘要
The objective of this research is to develop an ultra high vacuum materials deposition and characterization system. The system will provide combined deposition and analysis capabilities not currently available at TTU, significantly enhancing our materials research and educational efforts. Development of these capabilities will have an immediate impact on numerous projects funded by NSF.Intellectual Merit: The system will be used to conduct basic and applied research in thin film deposition and surface analysis. In large bandgap materials, our recent work has demonstrated ultraviolet LEDs operating at wavelength 262 nm. New questions regard the influence of surface chemistry and metallization on contact formation. The development of microelectronic materials with high dielectric constant leads to questions on the importance of silicon gate-dielectric interface. Our nano-engineered energetic materials rely on interdiffusion reactions. To optimize structures for energy storage and release, improvements are needed in control over deposition and in situ characterization to study the reactions. MOEMS research involves micromirror development and basic studies of wear. Surface characterization will advance our efforts in stiction and friction remediation and extend our MOEMS research into of fatigue and failure. Broader Impact: This instrumentation impacts numerous ongoing research projects and enhances our interactions with industry and national laboratories. The scope of our studies is broad, and spans numerous areas in science and engineering. The TTU Nano Tech Center provides an interdisciplinary setting with excellent technical, team, and leadership building opportunities for postdoctoral researchers and students at all levels through research and courses conducted within Center facilities.
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Device Processing Studies of Aluminum-Rich AlGaN Superlattices
  • 批准号:
    0323640
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $42.0万
  • 财政年份:
    2003
  • 负责人:
    Mark Holtz
  • 依托单位:
Fundamental Properties of GaAsN and InGaAsN - Toward Optoelectronic Applications
  • 批准号:
    0070240
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $24.0万
  • 财政年份:
    2000
  • 负责人:
    Mark Holtz
  • 依托单位:
Professional Master's Degree in Applied Physics - Internship in Regional Industry
  • 批准号:
    9705498
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $47.8万
  • 财政年份:
    1997
  • 负责人:
    Mark Holtz
  • 依托单位:
国内基金
海外基金
水稻边界发育缺陷突变体abnormal boundary development(abd)的基因克隆与功能分析
Development of a Linear Stochastic Model for Wind Field Reconstruction from Limited Measurement Data
  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    40万元
  • 批准年份:
    2020
  • 负责人:
    Vikrant Gupta
  • 依托单位: