Broadly Tunable Femtosecond Sources and Ultrafast Processes

建议编号：ECS-9705704首席研究员：唐正龙标题：可广泛调谐的飞秒光学参数源在这项研究中，由PI根据先前的资助开发的飞秒光学参数源的独特能力将被用于研究半导体和量子井结构中的载流子动力学。载流子动力学研究将集中在III-V化合物半导体(AlxGaAsz和GaAs)中的载流子捕获和逃逸以及电子和空穴动力学。化合物半导体和量子阱对于微电子学和激光应用是极其重要的。直接研究载流子动力学是不可能的，因为需要超快和红外光谱区探测器来研究所涉及的快速载流子动力学。PI对所需资源的开发将使第一次直接研究成为可能。根据这笔赠款，还计划进行一些进一步的光源开发研究，将光学参量振荡器(OPO)光源的范围从330纳米扩大到18微米。这项研究将创造一种广泛可调的光源，范围从近紫外线到中红外，这将是许多应用的强大工具。

Proposal Number: ECS-9705704 Principal Investigator: C. L. Tang Title: Broadly tunable femtosecond optical parametric sources In this research, the unique capabilities of the femtosecond optical parametric sources developed by the PI under a previous grant will be used to study carrier dynamics in semiconductors and quantum well structures. The carrier dynamics studies will focus on carrier capture and escape, and electron and hole dynamics in III-V compound semiconductors (AlxGayAsz and GaAs). Compound semiconductors and quantum wells are extremely important for microelectronics and laser applications. Direct study of the carrier dynamics has been impossible to date due to the need for both ultrafast and infrared spectral region probes to study the fast carrier dynamics involved. The PI's development of the needed sources will enable a first time direct study. Some further source development research, to extend the range of the optical parametric oscillator (OPO) source from 330 nanometers to 18 microns, is also planned under this grant. This research will create a broadly tunable source with a range extending from the near-ultraviolet to the mid-infrared, which will be a powerful tool for many applications.