Japan JSPS Program: Novel Single Electron Coulomb Blockade Transistor as a Probe in the Study of Si02/Si Interface

海因兹9724743 该奖项支持为期24个月的日本科学促进协会（JSPS）博士后研究金博士布鲁斯Hinds在东京工业大学，东京，日本。 Hinds博士将与量子效应电子学研究中心的Shunri Oda教授一起进行题为“新型单电子库仑阻塞晶体管作为SiO2/Si界面研究中的探针”的研究项目。" 拟议的研究将集中在一个单电子库仑阻塞晶体管的设计，并将专门针对较低的栅极控制电压（逻辑应用所需的）和界面氧化物的系统控制。 目前对库仑阻塞晶体管的研究表明，单个电子（浮栅中）的电荷控制着晶体管的状态（电子通过沟道的流动）。 拟议的研究将研究一种新的晶体管设计，该设计将允许浮栅处存在的界面氧化物（SiO2/Si）的变化，修改通过沟道的电子流，并降低决定逻辑操作功效的控制电压。 该研究的预期结果是有效利用特征尺寸接近10纳米的光刻技术，这代表了电子器件结构按比例缩小的重大进展。 拟议的研究结果将是至关重要的纳米尺度的电子学和传统的金属氧化物半导体（MOS）的制造，这是目前的微电子工业的基础的进步。 ***

Hinds 9724743 This award supports a 24 month Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Dr. Bruce Hinds at the Tokyo Institute of Technology, Tokyo, Japan. Dr. Hinds will work with Dr. Shunri Oda, Professor at the Research Center of Quantum Effect Electronics, on a research project entitled, "Novel Single Electron Coulomb Blockade Transistor as Probe in the Study of the SiO2/Si Interface." The proposed research will focus on the design of a single electron Coulomb blockade transistor and will be specifically directed toward lower gate control voltages (required for logic applications) and systematic control of interfacial oxides. Current research on Coulomb blockade transistors suggests that the charge of a single electron (in a floating gate) controls the state of the transistor (the flow of electrons through the channel). The proposed research will examine a novel transistor design that will allow for variations in interfacial oxides (SiO2/Si) present at the floating gate, modify the flow of electrons through the channel, and lower the control voltages that determine the efficacy of logic operations. Anticipated results of the research is the effective utilization of lithography with feature sizes near 10 nanometers, representing a significant advance in the scaling down of electronic device structures. The results of the proposed research will be critical to the advancement of nano-scale electronics and the conventional metal oxide semiconductor (MOS) fabrication, which is the basis of the present microelectronics industry. ***