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LT: Nonflowing Chemical Processing for Thin Film Manufacturing

LT: Nonflowing Chemical Processing for Thin Film Manufacturing
LT:用于薄膜制造的非流动化学处理
批准号:
9727334
负责人:
Carol McConica
金额:
$5.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-10-01 至 1999-09-30

项目摘要

项目成果

Carol McConica的其他基金

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中文摘要
翻译
9727334 McConica该研究致力于开发一种方法,以消除应用于集成电路制造的薄膜化学处理期间不必要的化学品流动。 其目标是使薄膜制造设施能够通过利用对所有工艺流体100%有效的化学反应器来实施工业生态学原则。 实现这一目标的策略是证明可以优化非流动工艺,以最大限度地减少高纯度流体的消耗/产生,同时仍然满足膜性能目标。 在极限情况下,在沉积的情况下,100%的工艺中使用的流体将转化为固体膜,或者在膜蚀刻的情况下转化为流体产物。 其目的不是改变一种电影或一种化学物质,而是根据当前对工业生态的需求,在制造技术中创造一种范式转变。 实现这一愿景的方法是设计一种新型的反应器,可以用于许多不同的化学过程。 该项目的目标是编制一份可由非流动工艺取代的集成电路制造中使用的流动化学工艺清单;展示一种非流动化学工艺,该工艺和相关设施可减少有毒化学品的使用和废物的产生,与商业生产的薄膜相比,该工艺减少了1000倍;并证明在通过非流动化学气相沉积在整个晶片上沉积钨的制造规范内的膜性质。 将创建集成电路制造中使用的化学驱动工艺的环境影响paredo。 然后,这些过程将进行评估,根据基本的动力学和热力学原理的非流动工艺条件的顺从性的影响。 将商业薄膜工艺转换为非流动条件的影响将产生。 薄膜处理的系统方法将产生用于将废物产生量化为处理参数的函数的算法。 该算法将包含关于薄膜工艺及其相关设施需求的信息,例如泵油污染率和反应堆清洁产生的废物。 在非流动处理过程中,将薄膜特性与近表面气体成分相关联的实验将创建一个符合所选测试化学品的薄膜制造规范的工艺条件窗口。 这些工艺条件将用于上述算法中,以找到优化废物最小化和膜性质的反应器规格和工艺条件。 这个过程将在完成晶圆级化学气相沉积非流动反应器的建设后,在完整的晶圆上进行演示。
英文摘要
9727334 McConica The research addresses the development of an approach to eliminate the unnecessary flow of chemicals during the chemical processing of thin films as applied to the manufacturing of integrated circuits. The goal is to enable thin film manufacturing facilities to implement principles of industrial ecology by utilizing chemical reactors that are 100% efficient with respect to all process fluids. The strategy for achieving this goal is to demonstrate that nonflowing processes can be optimized to minimize the consumption/creation of high purity fluids while still meeting film property goals. In the limit, 1 00% of the fluid used in the process will be converted to solid film in the case of deposition, or to fluid products in the case of film etching. The intent is not to change one film or one chemistry, but to create a paradigm shift in manufacturing technology based upon a current need to embrace industrial ecology. The way to realize the vision is to design a new type of reactor that can be used in many different chemical processes. The objectives of the project are to develop a list of flowing chemical processes used in IC manufacturing that could be replaced by nonflowing processes; to demonstrate a nonflowing chemical process that reduces the use of toxic chemicals and the creation of waste, both by the process and associated facilities, by a factor of 1000 for films comparable to those grown commercially; and to demonstrate film properties within manufacturing specifications for tungsten deposition on full wafers by nonflowing chemical vapor deposition. An environmental impact paredo of chemically-driven processes used in integrated circuit manufacturing will be created. Those processes will then be evaluated in order of impact in terms of fundamental kinetic and thermodynamic principles for amenability to nonflowing process conditions. A paredo of impact of converting commercial thin film processes to nonflowing conditions wil l result. A system approach to thin film processing will result in an algorithm for quantification of waste creation as a function of processing parameters. The algorithm will contain information with respect to the thin film process and its associated facility demands, such as pump oil contamination rate and waste from reactor cleaning. Experiments relating thin film properties to near-surface gas composition during nonflowing processing will create a window of process conditions that meet film manufacturing specifications for a chosen test chemistry. These process conditions will be used in the above algorithm to find reactor specifications and processing conditions that optimize waste minimization and film properties. This process will be demonstrated on full wafers upon the completion of the construction of a wafer scale chemical vapor deposition nonflowing reactor.
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FAW: In Situ Elucidation of Reaction Pathways During Low Pressure Chemical Vapor Deposition
  • 批准号:
    9023931
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    1991
  • 负责人:
    Carol McConica
  • 依托单位:
Reaction Steps and Mechanism for Chemical Vapor Deposition of Tungsten
  • 批准号:
    8712016
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $31.27万
  • 财政年份:
    1987
  • 负责人:
    Carol McConica
  • 依托单位:
Research Initiation: the Kinetics of the Selective Deposition of Tungsten
  • 批准号:
    8307242
  • 项目类别:
    Standard Grant
  • 资助金额:
    $4.79万
  • 财政年份:
    1983
  • 负责人:
    Carol McConica
  • 依托单位: