Controlled thermoelectric properties of low-dimensional charge carrier systems in semiconductor heterostructures

对高质量半导体异质结中低维电荷-载流子系统的热电性质进行了实验和理论研究。该项目的重点是系统，其中能谱可以通过外部参数在很大程度上进行控制。它们可以被视为具有量身定制的热电性能的纳米级物体和设备的工程模型系统。实验在嵌入纳米线圈、准一维导线以及调制掺杂III-V异质结零维耦合量子点系统的二维系统上进行。器件结构是通过电子束光刻的方法制备的。相干和非相干传输过程共存对热电势的影响将在详细的理论研究中讨论。

Thermoelectric properties of low-dimensional charge-carrier systems in high-quality semiconductor heterostructures are studied experimentally and theoretically. The project focuses on systems, in which the energy spectrum is controllable to a high extent via external parameters. They can be viewed as model systems for the engineering of nanoscale objects and devices with tailored thermoelectric properties. Experiments are performed on two-dimensional systems, embedded in nanoscrolls, quasi-onedimensional wires as well as zero-dimensional coupled quantum dot systems in modulation doped III-V heterostructures. Device structures are prepared by means of electron-beam lithography. Consequences for the thermopower due to the coexistence of coherent and incoherent transport processes will be addressed in detailed theoretical studies.