Defect Characterization and Engineering in Semi-Insulating II-VI Materials

9802712 Lynn这个大学/工业界合作的GOALI项目旨在更好地了解控制半绝缘（SI） CdZnTe电气和载流子捕获特性的缺陷的性质和特性。该方法包括系统地研究由熔体生长的高纯度SI CdZnTe的晶格缺陷，以了解它们在电补偿和载流子捕获中的作用。掺杂和生长实验与热激发和正电子湮灭光谱相结合，以识别缺陷和确定它们的捕获参数。将研究所选杂质的掺入和缺陷的形成作为生长条件的函数，以确定控制缺陷形成和掺入的关键热力学参数。杂质的浓度将由辉光放电质谱和共振电离增强质谱测量，并与热谱和正电子湮灭相关。红外显微镜和吸收将用于研究Cd和Te沉淀的形成及其对杂质掺入和缺陷配合物形成的影响。退火实验将用于研究主要缺陷的扩散特性，并更好地理解凝固后晶体冷却过程中缺陷的扩散和形成。该项目由DMR电子材料计划和MPS OMA（多学科活动办公室）共同支持。材料科学领域的基础研究问题与技术相关，由本项目解决。从研究中获得的基本知识和理解有望通过为设计和生产改进的材料和材料组合提供基本的理解和基础，从而有助于提高先进设备的性能和稳定性。该项目的一个重要特点是研究和教育的整合，通过项目的GOALI方面为学术人员提供重要的教育机会，让他们体验学术和工业研究方法和环境。* * *

9802712 Lynn This University/Industry collaborative GOALI project aims for greater understanding of the nature and properties of the defects governing the electrical and carrier trapping properties of semi- insulating(SI) CdZnTe. The approach involves systematic study of lattice defects in high-purity SI CdZnTe grown from melt by Bridgman techniques in order to understand their role in electrical compensation and carrier trapping. Doping and growth experiments with thermally stimulated and positron annihilation spectroscopies will be combined to identify defects and determine their trapping parameters. The incorporation of selected impurities and the formation of defects as a function of growth conditions will be studied to determine key thermodynamic parameters controlling defect formation and incorporation. The concentration of impurities will be measured by glow-discharge mass spectroscopy and resonance-ionization enhanced mass spectroscopy and correlated with thermal spectroscopies and positron annihilation. Infrared microscopy and absorption will be used to study the formation of Cd and Te precipitates and their effect on the incorporation of impurities and the formation of defect complexes. Annealing experiments will be conducted to shed study diffusion properties of dominant defects and provide a better understanding of defect diffusion and formation during cooling of the crystals following solidification. The project is co-supported by the DMR Electronic Materials Program and the MPS OMA(Office of Multidisciplinary Activities). %%% Basic research issues in a topical area of materials science having technological relevance are addressed by this project. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education by providing an important educational opportunity through the GOALI aspect of the project for academic personnel to experience both academic and industrial research approaches and environments. ***