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A Coordinated Experimental and Computational Modeling Investigation of Native Defects in Undoped, Nitrogen-Doped and Chlorine-Doped ZnSe and ZnMgSe Alloys Grown by Molecular..

A Coordinated Experimental and Computational Modeling Investigation of Native Defects in Undoped, Nitrogen-Doped and Chlorine-Doped ZnSe and ZnMgSe Alloys Grown by Molecular..
分子生长的未掺杂、氮掺杂和氯掺杂 ZnSe 和 ZnMgSe 合金中固有缺陷的协调实验和计算模型研究
批准号:
9806299
负责人:
Thomas Myers
金额:
$47.42万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-05-01 至 2002-01-31

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中文摘要
翻译
9806299迈尔斯该项目旨在更好地了解锌硒及相关合金中点缺陷的形成,包括对点缺陷(S)和点缺陷复合体的性质以及生长过程中的缺陷来源的基本了解。最初的研究将集中在锌硒上,后续的工作包括锌镁硒合金。该方法结合了分子束外延生长,使用电子顺磁共振定量测量外延层中的点缺陷浓度,详细的光致发光研究,以及与实验技术平行的第一原理方法来模拟ZnSe中的缺陷。%该项目致力于具有高度技术相关性的材料科学主题领域的基础研究问题。这项研究将在基础水平上为电子/光子器件的重要方面贡献基本的材料科学知识。实验工具现在可以用来对材料缺陷及其来源进行原子水平的观察,如果更好地理解,这将促进基础科学和技术的进步。从研究中获得的基本知识和理解有望为设计和生产改进的材料和材料组合提供基本的理解和基础,从而有助于提高先进器件和电路的性能和稳定性。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训,将研究和教育结合起来。***。
英文摘要
9806299 Myers This project aims for greater understanding of point defect formation in ZnSe and associated alloys including a fundamental understanding of the nature of the point defect(s) and point defect complexes as well as defect origins during growth. Initial studies will focus on ZnSe, with subsequent efforts including ZnMgSe alloys. The approach combines molecular beam epitaxial growth; quantitative measurement of point defect concentrations in epilayers using electron paramagnetic resonance; detailed photoluminescence studies; and, in parallel with the experimental techniques, a first principles approach to modeling defects in ZnSe. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices. Experimental tools are now available to allow atomic level observation of materials defects and their origins which when better understood will allow advances in both fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***.
期刊论文(0)
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会议论文
Development of Cr2+-Doped II-VI Heterostructure Laser Grown by Molecular Beam Epitaxy for Room-Temperature Infrared Applications
Acquisition of a Custom Molecular Beam Epitaxy System
An Undergraduate AI Laboratory
  • 批准号:
    8851192
  • 项目类别:
    Standard Grant
  • 资助金额:
    $2.4万
  • 财政年份:
    1988
  • 负责人:
    Thomas Myers
  • 依托单位:
Research in Undergraduate Institutions: Acquisition of an Electroreflectance Spectrometer (Materials Research)
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