COMPETITION: Industry/University Cooperative Research Center for Microcontamination Control

随着伦斯勒理工学院（RPI）的加入，亚利桑那大学微污染控制工业/大学合作研究中心（I/UCRC）正在成为一个多大学的I/UCRC。该中心的研究涉及在制造半导体芯片的过程中减少污染。为了满足竞争性更新公告和NSF公告97-164，RPI研究站点正在通过研究解决硅器件上层制造过程以及污染物与降低制造产量的致命缺陷之间的关系，扩大中心的研究议程，提供重要的新知识物质。新站点的研究议程将解决1.)改进BEOL良率模型的缺陷分析[j]。薄膜等离子体加工中过程诱导粒子形成的控制[j]。化学机械平面化过程中的缺陷控制[j]。铜大马士革结构的cmp后清洗。

ABSTRACT EEC-9812850 ROSE The University of Arizona Industry/University Cooperative Research Center (I/UCRC) for Microcontamination Control is becoming a multi-university I/UCRC with the addition of Rensselaer Polytechnic Institute (RPI). The Center's research addresses contamination reduction in processes used to manufacture semiconductor chips. Meeting the announcement for competitive renewal and NSF Announcement 97-164, the RPI research site is expanding the Center's research agenda with significantly new intellectual substance through research addressing processes used in the manufacture of the upper layers of silicon devices and the relationship between contaminants and killer defects that reduce manufacturing yield. The research agenda of the new site will address 1.) Defect Analysis for Improved BEOL Yield Modeling, 2.) Control of Process-induced Particle Formation in Thin-film Plasma Processing, 3.) Defect Control During Chemical Mechanical Planarization, 4.) Post-CMP Cleaning of Copper Damascene Structures.