Surface-Emitting High-Power(>0.1W) Single-Lobe, Single-Mode Diode Lasers

提出了两种实现高功率面发射激光器单模单瓣工作的新概念。 第一个概念是使用二阶复耦合光栅，以有利于对称模式。第二个概念是在二阶光栅的两侧使用一阶布拉格光栅反射器以确保均匀的近场强度分布。 这些器件将采用InGaAs/InGaP/GaAs，无Al，应变层量子阱结构。 一个20个元件的反导锁相激光器阵列预计将发射衍射限制光束，垂直于芯片表面的功率水平超过一瓦的范围。

Two novel concepts to achieve single-mode, single-lobe operation of high power surface emitting lasers are proposed. The first concept is to use a second-order complex-coupled grating for favoring of symmetric mode. The second concept is to use first-order Bragg grating reflectors on both sides of the second-order grating to insure a uniform near-field intensity profile. The devices will be made with InGaAs/InGaP/GaAs, Al-free, strained-layer quantum well structures. A 20-element anti-guide phase-locked laser array is expected to emit diffraction-limited beam, normal to the chip surface to power levels over a watt range.