Züchtung und Untersuchung von Volumenkristallen und Epitaxieschichten von beta-Ga2O3, In2O3, SnO2 und ZnO

从半导体科学和技术的角度对氧化物的探索为发现新的物理学以及开发具有前所未有的性能和功能的新器件提供了巨大的机会。半导体二元氧化物（β-Ga2O3, In2O3, SnO2, ZnO）作为新型宽带隙电子材料的探索和开发引起了人们极大的兴趣。当在非氧化物半导体（如Si， GaAs）中进行控制掺杂的高纯度外延膜生长时，它们作为一类新的半导体（nsf合作伙伴UCSB）具有巨大的潜力。在这种情况下，提议的项目解决了一个主要瓶颈，即同质外延的大块衬底的可用性（dfg合作伙伴IKZ和HU Berlin）。熔体中只能生长出β-Ga2O3和ZnO晶体，而由于蒸发作用强，In2O3和SnO2晶体只能通过助熔剂生长或气相生长。然而，到目前为止，这些晶体还没有足够的尺寸和高度完美的衬底来制作高质量的薄膜。晶体生长将密切伴随着广泛的表征，包括光发射和x射线吸收光谱（HU Berlin）。

The exploration of oxides from the perspective of semiconductor science and technology offers great opportunities for uncovering new physics as well as developing novel devices with unprecedented performance and functionality. There is currently great interest in the exploration and development of semiconducting binary oxides (β-Ga2O3, In2O3, SnO2, ZnO) as new wideband- gap electronic materials. When grown as high purity epitaxial films with controlled doping, as carried out for non-oxide semiconductors (e.g., Si, GaAs), they have great potential as a new class of semiconductors (NSF-partner UCSB). In this context the proposed project addresses a major bottleneck, namely the availability of bulk substrates for homoepitaxy (DFG-partners IKZ and HU Berlin). Whereas only β-Ga2O3 and ZnO crystals can be grown from melt, due to strong evaporation In2O3 and SnO2 crystals have to be grown by flux growth or via vapor phase. However, so far these crystals are not available in sufficient size and high perfection for substrates for high quality films. The crystal growth will be closely accompanied by extensive characterization including photoemission and x-ray absorption spectroscopy (HU Berlin).