GOALI: Device Passivation with Novel Precursors

这项研究致力于利用新的前驱体和沉积技术开发用于化合物半导体器件的稳定的介质钝化层。具有新型前驱体和沉积技术的化合物半导体器件。化合物半导体材料在高速、大功率微电子领域具有广阔的应用前景。具有低缺陷、热稳定的介电层的器件钝化是可靠、长期集成电路性能的先决条件。通过使用新的前体，PI将尝试将可能导致III-V材料不稳定的氢夹杂降至最低。在氮化硅化合物的生产中，将使用基于氢和氟的前驱体。将使用射频和微波等离子体反应堆，并将评估各种沉积策略的效果。光发射和质谱学将被用来理解等离子体化学。FTIR和XPS将成为检测各种化学基团成键的技术。用透射电子显微镜对失效机理进行了分析。这项研究的主题对于先进半导体器件领域来说是一个严肃的问题。在确定低温工艺以制造更好的介质钝化层方面的进展可以为各种计算和电子控制应用带来可观的技术和经济收益。

This research effort is focused on the development of stable dielectric passivation layers for compound semiconductor devices with novel precursors and deposition techniques. Compound semiconductor devices with novel precursors and deposition techniques. Compound semiconductor materials show promise for high speed, high power microelectronics applicaitons. Device passivation with a low defect, thermally stable dielectric layer is a prerequisite for reliable, long term integrated circuit performance. Through the use of novel precursors, the PI will attempt to minimize hydrogen inclusion which can lead to instabilities, in III-V materials. The use of deuterium and fluorine based precursors will be used in the production fo silicon nitride compunds. Both radio frequency and microwave plasma reactors will be used and the effects of various deposition strategies will be evaluated. Optical emission and mass spectrscopy will be used to understand the plasma chemistry. FTIR and XPS will be the techniques for the the examination fo the bonding of varous chemical groups. TEM will be used to examine the mechanism of failure analysis. The topic fo the proposed research is a serious issue for the advanced semiconductor device community. Progress in identifying a low temperature process to make better dielectric passivation layers could be a considerable technological and economic benefit for a wide variety of computational and electronic control applications..