EAGER: Novel high electron mobility transistor designs

EAGER：新颖的高电子迁移率晶体管设计

• 批准号: 1445720
• 负责人: Fan Ren
• 金额: $ 16.13万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-08-01 至 2016-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1445720&HistoricalAwards=false
• 关键词: EAGER; Novel; electron; mobility; transistor

Title: EAGER: Novel high electron mobility transistor designsA novel approach is proposed to enhance heat dissipation and reliability in high electron mobility transistors based on wide bandgap semiconductor materials. The approach consists in by incorporating a backside gate, through the Si substrate, directly under the top side gate finger. Heat generated within the active area of the device would be effectively dissipated through the back-side contact. The successful fabrication of the backside gated device would produce more reliable power transistors with higher drain breakdown voltages which could be used as small package and uncooled dc to ac convertors for automotive and solar cell applications. From an educational prospective, this project will provide training for both graduate and undergraduate students. Special efforts will be made to recruit female and underrepresented minority students for participation. Research discoveries from this project will be incorporated into the semiconductor materials and processing course developed by the principle investigator. Outreach activities supported by the University of Florida, including school visits, the training of high school senior students, and participation in the NSF GK-12 Program, will be conducted along with the proposed research work.Gallium nitride (GaN) material based high electron mobility transistor (HEMT) based structures have shown great potential for high voltage (1000V) and high power density applications (15 W/mm). This includes high efficiency uncooled dc to ac convertors for electrical cars and solar cells due to its superior electron mobility and saturation, as well as, its energy bandgap of 3.3 eV as compared to 1.12 eV for silicon (Si). However, the current device performance is limited by the high junction temperature due to inefficient heat dissipation of the device design. Higher junction temperatures not only degrade HEMT dc and rf performance, but also diminish the device reliability. Thus, it is very critical to effectively dissipate heat generated during device operation for high power electronics. By taking advantage of GaN HEMT structures grown on SiC or Si substrate, the PI intends to place a through substrate via hole directly underneath the active area of the HEMT and fill up the via hole with plated copper. Not only can the heat generated within the active area of the device be effectively dissipated from this via hole, the back-side via contact itself also can be used as a field plate or a back gate to further increase the device operation voltage.

职务名称：EAGER：新型高电子迁移率晶体管的设计提出了一种新的方法来提高基于宽带隙半导体材料的高电子迁移率晶体管的散热和可靠性。该方法包括通过在顶侧栅极指状物的正下方通过Si衬底并入背侧栅极。在器件的有源区域内产生的热量将通过背侧接触有效地消散。背栅器件的成功制造将产生具有更高漏极击穿电压的更可靠的功率晶体管，其可用作汽车和太阳能电池应用的小封装和非冷却DC到AC转换器。 从教育的角度来看，该项目将为研究生和本科生提供培训。 将作出特别努力，招收女生和代表人数不足的少数民族学生参加。该项目的研究发现将被纳入主要研究者开发的半导体材料和加工课程。由佛罗里达大学支持的外展活动，包括学校访问，高中高年级学生的培训，并参与NSF GK-12计划，将与拟议的研究工作一起进行沿着。氮化镓（GaN）材料为基础的高电子迁移率晶体管（HEMT）为基础的结构已显示出巨大的潜力，高电压（1000 V）和高功率密度（15 W/mm）的应用。这包括用于电动汽车和太阳能电池的高效率非冷却直流到交流转换器，这是由于其上级电子迁移率和饱和度，以及其3.3 eV的能带隙，而硅（Si）的能带隙为1.12 eV。然而，由于器件设计的散热效率低，目前的器件性能受到高结温的限制。 较高的结温不仅会降低HEMT的直流和射频性能，而且会降低器件的可靠性。 因此，对于高功率电子器件而言，有效地消散在器件操作期间产生的热量是非常关键的。 通过利用在SiC或Si衬底上生长的GaN HEMT结构，PI打算将穿过衬底的通孔直接放置在HEMT的有源区下方，并用镀铜填充通孔。 不仅可以从该通孔有效地消散在器件的有源区域内产生的热，背侧通孔接触本身也可以用作场板或背栅以进一步增加器件操作电压。