EAGER: Novel high electron mobility transistor designs

题目：EAGER：新型高电子迁移率晶体管设计提出了一种基于宽禁带半导体材料的高电子迁移率晶体管的新方法，以提高其散热性和可靠性。该方法包括通过Si衬底合并一个后门，直接在顶部侧门手指下。在器件的有源区域内产生的热量将通过背面接触有效地消散。背面门控器件的成功制造将产生更可靠的功率晶体管，具有更高的漏极击穿电压，可用于汽车和太阳能电池应用的小封装和非冷却直流到交流转换器。从教育的角度来看，这个项目将为研究生和本科生提供培训。将作出特别努力，招收女性和代表性不足的少数民族学生参加。本项目的研究成果将被纳入主要研究者开发的半导体材料和加工课程中。由佛罗里达大学支持的外展活动，包括学校访问，高中高年级学生的培训，以及参与NSF GK-12计划，将与拟议的研究工作一起进行。基于氮化镓（GaN）材料的高电子迁移率晶体管（HEMT）结构在高电压（1000V）和高功率密度（15w /mm）应用中显示出巨大的潜力。这包括用于电动汽车和太阳能电池的高效非冷却直流到交流转换器，由于其优越的电子迁移率和饱和度，以及3.3 eV的能量带隙，而硅（Si）的能量带隙为1.12 eV。然而，由于器件设计散热效率低，导致结温过高，限制了器件的性能。较高的结温不仅会降低HEMT的直流和射频性能，还会降低器件的可靠性。因此，对于大功率电子器件而言，有效散热是非常关键的。通过利用在SiC或Si衬底上生长的GaN HEMT结构，PI打算在HEMT的活性区域下方直接放置一个穿过衬底的通孔，并用镀铜填充通孔。通过该通孔不仅可以有效地将器件有源区域内产生的热量散发出去，背面的通孔本身也可以作为场板或后门，进一步提高器件的工作电压。

Title: EAGER: Novel high electron mobility transistor designsA novel approach is proposed to enhance heat dissipation and reliability in high electron mobility transistors based on wide bandgap semiconductor materials. The approach consists in by incorporating a backside gate, through the Si substrate, directly under the top side gate finger. Heat generated within the active area of the device would be effectively dissipated through the back-side contact. The successful fabrication of the backside gated device would produce more reliable power transistors with higher drain breakdown voltages which could be used as small package and uncooled dc to ac convertors for automotive and solar cell applications. From an educational prospective, this project will provide training for both graduate and undergraduate students. Special efforts will be made to recruit female and underrepresented minority students for participation. Research discoveries from this project will be incorporated into the semiconductor materials and processing course developed by the principle investigator. Outreach activities supported by the University of Florida, including school visits, the training of high school senior students, and participation in the NSF GK-12 Program, will be conducted along with the proposed research work.Gallium nitride (GaN) material based high electron mobility transistor (HEMT) based structures have shown great potential for high voltage (1000V) and high power density applications (15 W/mm). This includes high efficiency uncooled dc to ac convertors for electrical cars and solar cells due to its superior electron mobility and saturation, as well as, its energy bandgap of 3.3 eV as compared to 1.12 eV for silicon (Si). However, the current device performance is limited by the high junction temperature due to inefficient heat dissipation of the device design. Higher junction temperatures not only degrade HEMT dc and rf performance, but also diminish the device reliability. Thus, it is very critical to effectively dissipate heat generated during device operation for high power electronics. By taking advantage of GaN HEMT structures grown on SiC or Si substrate, the PI intends to place a through substrate via hole directly underneath the active area of the HEMT and fill up the via hole with plated copper. Not only can the heat generated within the active area of the device be effectively dissipated from this via hole, the back-side via contact itself also can be used as a field plate or a back gate to further increase the device operation voltage.