GOALI: Novel Wide Energy Bandgap Semiconductor Based Gas and Liquid Sensors

GOALI：新型宽能带隙半导体气体和液体传感器

• 批准号: 0301178
• 负责人: Fan Ren
• 金额: $ 30.9万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-10-01 至 2006-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0301178&HistoricalAwards=false
• 关键词: GOALI; Novel; Wide; Energy; Bandgap

Research:Wide bandgap semiconductor gas and liquid sensors have potential uses in detecting fuel leaks in spacecraft, automobiles and aircraft, fire detectors, exhaust diagnosis and emissions from industrial processes as well as in in-situ monitoring in chemical processes. Gallium nitride (GaN) and silicon carbide (SiC) are capable of operating in harsh environments and higher temperatures than more conventional semiconductors such as silicone (Si) because of their large bandgap. Simple Schottky diodes, metal oxide semiconductor (MOS) diodes, or field-effect transistor structures fabricated of GaN or SiC are sensitive to a number of gases, including hydrogen and some hydrocarbons. An additional attractive attribute of GaN and SiC materials is that gas sensors based on them can be integrated with high-temperature electronic devices on the same chip.The PI has demonstrated the feasibility of combustion gas detectors with extremely fast response times and capable of operating at high temperatures, eliminating bulky and expensive cooling systems. The device structure is essentially identical to that employed for power rectifiers and emphasizes how similar structures can be used for both gas sensing and high power electronics applications. To expand the capabilities of such solid-state, dual-use systems, the PI is planning to develop several new classes of gas and liquid sensors for inexpensive, low-cost, low weight monitoring of gases and liquids released during fires. The devices take advantage of a strong materials and manufacturing base at Sterling Semiconductor and the sensor design and fabrication abilities of faculty and students at the University of Florida. The basic science behind the sensing mechanisms in GaN and SiC structures will be investigated, and design/optimization will be carried out based on the results from new, stable metalization schemes and novel approaches to sensing the relevant gases and liquids.Broader Impact:The University of Florida has a Student Science Training Program run every summer by its Center for Precollegiate Education and Training. The program brings in a select group of 10th and 11th grade students to do research in science and engineering. Two of these students will participate in this research. The Center also runs an NSF Teacher Research Update Experience (TRUE) program during the summer. The PI will present a lecture on solid-state sensors at the program and will collaborate with interested teachers to translate the research experience into modules, which can be taken back to middle and high schools. At the end of their stay, the modules will be tested on students participating in the program.

研究：宽禁带半导体气体和液体传感器在探测航天器、汽车和飞机的燃料泄漏、火灾探测器、工业过程的废气诊断和排放以及化学过程的现场监测方面具有潜在的用途。氮化镓（GaN）和碳化硅（SiC）由于其大的带隙，能够在恶劣的环境和更高的温度下工作，而不是更传统的半导体，如硅（Si）。简单的肖特基二极管、金属氧化物半导体（MOS）二极管或由氮化镓或碳化硅制成的场效应晶体管结构对许多气体敏感，包括氢和一些碳氢化合物。GaN和SiC材料的另一个吸引人的特性是，基于它们的气体传感器可以与同一芯片上的高温电子器件集成。PI已经证明了燃烧气体探测器的可行性，该探测器具有极快的响应时间，能够在高温下工作，消除了笨重且昂贵的冷却系统。该器件结构基本上与用于功率整流器的结构相同，并强调如何将类似的结构用于气体传感和高功率电子应用。为了扩大这种固态、两用系统的能力，PI计划开发几种新型气体和液体传感器，用于廉价、低成本、低重量地监测火灾中释放的气体和液体。这些设备利用了斯特林半导体强大的材料和制造基地，以及佛罗里达大学教师和学生的传感器设计和制造能力。将研究GaN和SiC结构中传感机制背后的基础科学，并根据新的、稳定的金属化方案和传感相关气体和液体的新方法的结果进行设计/优化。更广泛的影响：佛罗里达大学每年夏天都有一个学生科学培训项目，由其大学预科教育和培训中心运行。该项目吸引了一群经过挑选的10年级和11年级的学生来做科学和工程方面的研究。其中两名学生将参与这项研究。该中心还在夏季运行NSF教师研究更新经验（TRUE）项目。PI将在该项目上发表关于固态传感器的讲座，并将与感兴趣的教师合作，将研究经验转化为模块，这些模块可以带回初中和高中。在实习结束后，这些模块将在参与项目的学生身上进行测试。