Ablation Plasma Ion Implantation

罗纳德·M·格利根巴赫这是一项用于注入和合成固体靶材的新型离子源的研究。在这项新技术中，烧蚀等离子体离子注入(APII)，即对固体靶(金属、陶瓷或半导体)的能束烧蚀被用来产生离子脉冲，用于注入、离子辅助沉积或化合物的合成。这项研究的目的是开发一个基于APII的知识库和定义可用于评估工程应用的标度定律。使用的主要消融源是工作在50赫兹的KrF准分子激光器；其他可供比较的消融源包括电子束、XeCl激光和YAG激光。激光和光学诊断被用来表征烧蚀羽流的种类、电子、原子和离子的密度和能量，以及鞘的行为。

ABSTRACTCTS-9907106Ronald M. GligenbachThis is an investigation of a new ion source for implantation and synthesis of materials from solid targets. In this new technique, ablation plasma ion implantation (APII), energy-beam ablation of solid targets (metals, ceramics, or semiconductors) is used to generate pulses of ions for implantation, ion-assisted deposition, or synthesis of compounds. This study aims at development of a knowledge base on APII and the definition of scaling laws that can be used to evaluate engineering applications. The primary ablation source used is a KrF excimer laser operating at 50 Hz; other ablation sources available for comparison include e-beam, XeCl laser and YAG laser. Laser and optical diagnostics are applied to characterize the ablation plume species, the densities and energies of electrons , atoms, and ions, and the behavior of the sheath.