SBIR Phase I: Novel Electric Field Probe for High-Speed Integrated Circuits and Semiconductor Devices

这个小型企业创新研究第一阶段项目将开发一种新的电光方法，用于无创探测电场，从而在集成电路中无需外部探头即可探测波形。该技术将适用于任何半导体，无论其晶体结构如何，并且可以用于成像和单点检测，而不会降低时间分辨率。因为该技术是基于光学的，所以没有寄生电容被添加到被测量的设备中。飞秒激光探测待测装置；因此，该技术的时间分辨率比探测现有设备所需的时间分辨率快几个数量级。由于硅MOSFET技术是逻辑和存储器件中使用的主要技术，因此开发在硅基器件上工作的非侵入性技术非常重要。这种测量半导体器件中存在的电场的方法将对硅以及任何其他半导体有效。对工业、政府和学术界的好处将是巨大的，允许对集成电路进行探测，并对pn结进行研究和成像。提出的研究的商业应用包括研究半导体器件的技术发展，以及在集成电路中无创测量电子波形的仪器的发展。这种仪器可用于诊断开发过程中集成电路、生产线和电路板中的问题。

This Small Business Innovation Research Phase I project will develop a novel electro-optic method for noninvasively probing electric fields, and hence waveforms, in integrated circuits without external probes. The technique will work on any semiconductor regardless of its crystal structure, and can be used for both imaging and single point detection without degradation of temporal resolution. Because the technique is optically based, no parasitic capacitance is added to the device being measured. A femtosecond laser probes the device to be measured; thus the technique's temporal resolution is several orders of magnitude faster than the time resolution required to probe present devices. Since silicon MOSFET technology is the dominant technology used in logic and memory devices, it is important to develop noninvasive techniques that work on silicon-based devices. This method for measuring the electric fields present in semiconductor devices will be effective on silicon as well as any other semiconductor. The benefit to industry, government, and academia will be enormous, allowing integrated circuits to be probed and p-n junctions to be studied and imaged. Commercial applications of the proposed research include the development of techniques for studying semiconductor devices, and the development of instrumentation to measure electronic waveforms in integrated circuits noninvasively. Such instrumentation could be used to diagnose problems in integrated circuits during development, on production lines, and in circuit boards.