SBIR Phase II: Novel Electric Field Probe for High-Speed Integrated Circuits and Semiconductor Devices

这项小型企业创新研究（SBIR）第二阶段项目将开发一种用于半导体器件中电场和波形的高速、非侵入式光学探头原型。该技术被设计用于任何半导体，无论其晶体结构如何，都可以用于成像和单点检测，而不会降低时间分辨率。因为该技术是基于光学的，所以没有寄生电容被添加到被测量的设备中。飞秒激光探测待测设备，时间分辨率比探测现有设备所需的时间分辨率快几个数量级。大于10太赫兹的带宽应该是可能的。这种非侵入式探针技术将应用于硅基器件。在他们的生产和测试半导体行业。

This Small Business Innovation Research (SBIR) Phase II project will develop a prototype high speed, non-invasive, optical probe for electric fields, and hence waveforms, in semiconductor devices. The technique is designed to work on any semiconductor regardless of its crystal structure and can be used for both imaging and single point detection without degradation of temporal resolution. Because the technique is optically based, no parasitic capacitance is added to the device being measured. A femtosecond laser probes the device to be measured, and temporal resolution is several orders of magnitude faster than the time resolution required to probe present devices. Bandwidths of greater than 10 terahertz should be possible.This non-invasive probe technique will be applied to silicon-based devices. In their production and testing in the semiconductor industry.