Development of a Low-Power, RF Integrated Circuit R&D Infrastructure in Idaho for the Rapid Commercialization of Wireless, Personal Communication Consumer Products

parkeidaho将成为下一次消费电子革命的主要参与者。利用已经在该州的“集成电路”或“IC”公司的基础，再加上开发更复杂的低功耗射频集成电路研究和开发基础设施，它可以在低功耗RF互补金属氧化物硅或CMOS通信市场中占有一席之地。通过将CMOS晶体管的长度缩小到接近十分之一微米，最近实现了超过100GHz的最大开关频率。由于这种高性能可以使用相对低成本的制造工艺来实现，因此CMOS正迅速成为许多无线射频（RF）应用的重要选择，这些应用以前被认为是更昂贵的双极和砷化镓技术的专属领域。这项新技术将使价格合理的无线个人通讯器成为可能，它可以从地球上的任何位置提供即时的音频、视频和数据通信。为了实现RF-CMOS的成本优势，开发新型超低功耗RF-CMOS晶体管和电路至关重要。该项目提出改进RF-CMOS器件所需的SPICE模型，这将使IC设计人员能够成功地在GHz范围内进行芯片的首通设计。它还将构建和测试适合手持应用的单芯片、低功耗SOI RF-CMOS、CDMA扩频收发器芯片原型。1997年，博伊西州立大学开设了一个新的半导体器件表征实验室，对6-8'硅片上的CMOS器件进行电测量和建模。这台新设备是作为惠普公司200万美元赠款的一部分获得的。1998年9月，博伊西州立大学还开设了新的爱达荷微加工实验室，这是一个由国家资助的1000级洁净室，用于教学和研究。这些实验室设施将与一个广泛的计算机辅助设计实验室一起，用于完成拟议的研究，并协助公司将成果商业化。

EPS 9977454ParkeIdaho is poised to become a major player in the next revolution in consumer electronics. Using the base of "Integrated Circuits" or "IC" companies already based in the state, together with the development of a more sophisticated low-power, RF Integrated Circuit research and development infrastructure as proposed in this activity, it can capture a share of the low-power, RF- Complementary Metal-Oxide-Silicon or CMOS communications market. By scaling CMOS transistors to lengths near a tenth of a micron, maximum switching frequencies exceeding 100GHz have recently been achieved. Because this high-performance can be achieved using a relatively low-cost manufacturing process, CMOS is rapidly becoming a serious option for many wireless Radio Frequency (RF) applications that were previously considered to be the exclusive domain of more expensive bipolar and gallium arsenide technologies. This new technology will allow for affordable, wireless personal communicators that can provide instant audio, video, and data communications from any location on Earth.In order for the cost advantage of RF-CMOS to be realized, it is critical that new ultra-low-power RF-CMOS transistors and circuits be developed. This project proposes to improve SPICE models needed for RF-CMOS devices, which will enable IC designers to have successful, first-pass designs of chips which operate in the GHz regime. It will also build and test a prototype single-chip, low power SOI RF-CMOS, CDMA spread-spectrum transceiver chip suitable for handheld applications. In 1997, Boise State opened a new Semiconductor Device Characterization Lab in which CMOS devices on 6-8' silicon wafers are electrically measured and modeled. This new equipment was obtained as part of a $2 million grant from Hewlett-Packard. In September 1998, Boise State also opened the new Idaho Microfabrication Laboratory, a Class 1000 cleanroom for both teaching and research, funded by the State. Together with an extensive CAD lab, these lab facilities will be used to accomplish the proposed research and to assist companies in commercializing the results.