SBIR Phase II: Development of AlGaN Field Emission Cathodes

这个小型企业创新研究二期项目的重点是优化和扩大氮化铝镓（AlGaN）场发射器技术，该技术可用于实际应用。已经确定了非常有希望用于处理场发射应用的宽带隙的材料。这些材料具有低到负电子亲合力。第一阶段的项目展示了具有不同掺杂水平的场发射性能的各种AlGaN成分。二期项目将使用紧密耦合的理论建模和实验进行详细和系统的参数优化，以生产坚固的低压III-V型氮化物场发射器。该项目将利用该公司的沉积室，并将演示成分、掺杂、离子注入、衬底温度等参数的影响。为了更好地理解AlGaN冷阴极技术，还将研究晶粒边界的微观结构和电导率的影响。该技术的商业潜力是一个紧凑的可寻址x射线源。其他应用将包括电子冷却器、电子枪、太阳盲紫外线探测器、大面积照明和平板显示器。

This Small Business Innovation Research Phase II project focuses on optimization and scale-up of an aluminum gallium nitride (AlGaN) field emitter technology that could be used for practical applications. Materials have been identified that are very promising to deal with the wide-band-gap for field-emission applications. These materials have low to negative electron affinity. The Phase I project demonstrated various AlGaN compositions that possessed different doping levels for field emission properties. The Phase II project will carry out a detailed and systematic parametric optimization using closely-coupled theoretical modeling and experimentation to produce rugged, low-voltage III-V nitride field emitters. The project will utilize the company's deposition chamber and will demonstrate the effects of composition, doping, ion implantation, substrate temperature and other parameters. Effects of microstructure and conductivity of grain boundaries will also be investigated to develop better understanding of the AlGaN cold cathode technology.The commerical potential for this technology is a compact addressable X-ray source. Additional applications will include electronic coolers, electron guns, solar-blind UV detectors, large-area lighting and flat-panel displays.