Athermal Annealing of Ion-Implanted Silicon

这项提议将继续研究非热退火工艺。这一过程包括将高能激光脉冲聚焦到样品表面的一个小光点(~2 mm)。已经发现，这样的激光脉冲可以在离子注入的硅中对大约1cm2的面积进行退火。结果表明，该工艺在不引入热量的情况下进行，因此不同于传统的热处理工艺。该工艺已经在离子注入了硼、磷和砷的硅上证明了100%的重复性。在注入能量低至1keV的硼的情况下，证明了该工艺的有效性。目前的项目将研究增加退火区的方法，并将该工艺应用于不同的材料。增加面积将通过尝试不同的激光聚焦方案来实现。这些措施包括使用柱面透镜而不是球面透镜，改变激光光斑大小和入射角度，以及使用其他在材料中发射冲击波的方法。要研究的不同材料系统包括图案化硅片、简单的电结构，如二极管、GaAs、GaN和High-k介电材料。处理后，将使用红外吸收光谱、二次离子质谱仪、扩展电阻剖析、透射电子显微镜和方块电阻率测量来确定该工艺的有效性。该项目的完成将增加材料加工的知识，并可能为半导体行业提供有价值的加工步骤。该项目还将服务于教育目的，雇用研究生和本科生，然后他们可以在科学和工程领域从事职业。

This proposal will continue the investigation of a non-thermal annealing process. The process involves focusing a high energy laser pulse to a small (~2 mm) spot on the surface of a sample. It has been found that such a laser pulse will anneal areas of approximately 1cm 2 in ion-implanted silicon. It has been shown that the annealing occurs without the introduction of heat, and is therefore different that conventional thermal processes. The process has demonstrated 100% reproducibility on silicon that has been ion-implanted with boron, phosphorus, and arsenic. The effectiveness of the process has been demonstrated at implant energies as low as 1keV for boron. The current project would investigate methods for increasing the annealed area, and apply the process to different materials. Increasing the area will be accomplished by trying different laser focusing schemes. These involve using cylindrical lenses instead of spherical lenses, varying the laser spot size, and angle of incidence, and using other methods of launching shock waves in the material. Different material systems to be investigated include patterned silicon wafers, simple electrical structures, such as diodes, GaAs, GaN, and high-k dielectric materials. After processing, the effectiveness of the process will be determined using infrared absorption spectroscopy, secondary ion mass spectrometry, spreading resistance profiling, transmission electron microscopy, and sheet resistivity measurements. Completion of the projectwill increase knowledge of materials processing, and may provide a valuable processing step for the semiconductor industry. The project will also serve an educational purpose, employing both graduate and undergraduate students, who can then pursue careers in science and engineering.