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Development of a Low-Temp Scanning Tunneling Microscopy Facility with High-Resolution Electronic, Vibrational and Magnetic Spectroscopy Capabilities for Research and Education

Development of a Low-Temp Scanning Tunneling Microscopy Facility with High-Resolution Electronic, Vibrational and Magnetic Spectroscopy Capabilities for Research and Education
开发具有高分辨率电子、振动和磁能谱分析能力的低温扫描隧道显微镜设备,用于研究和教育
批准号:
0116339
负责人:
Ludwig Bartels
金额:
$30.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-09-01 至 2004-08-31

项目摘要

项目成果

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中文摘要
翻译
该奖项来自重大研究仪器计划,用于支持加州大学河滨分校(UCR)用于表面处理研究和教学的高分辨率低温扫描隧道显微镜(STM)的开发。该研究装置基于STM,温度范围在10K到350K之间。它将被设置为允许用几十电子伏特到1千电子伏特能量的激光脉冲和电子在现场激发样品。它将用于对吸附物和薄膜在其激发前后的结构和光谱分析,类似于目前或不久的未来相关表面工艺:用于光学光刻的直接光激发;由(超)短激光脉冲诱导的至数百K的表面电子温度的光激发,持续几个ps的时间跨度;在电子束曝光中,由各种能量的碰撞电子激发;由隧道电流产生的低能电子的激发。该仪器的低温能力将允许冻结由各种激发模式产生的反应中间体。因此,它们可用于STM的结构和光谱分析。产物之间的比较提供了对所用反应的基本步骤的重要洞察。拟议的仪器将被纳入UCR的教育计划,在PI为化学、物理和工程专业的高年级本科生和研究生提供的半导体工艺入门课程的背景下。此外,它还将提供给研究生用于他们的研究项目。该奖项来自重大研究仪器计划,用于支持加州大学河滨分校(UCR)用于表面处理研究和教学的高分辨率低温扫描隧道显微镜(STM)的开发。该研究装置基于STM,温度范围在10K到350K之间。它将被设置为允许用几十电子伏特到1千电子伏特能量的激光脉冲和电子在现场激发样品。它将用于对吸附物和薄膜在其激发前后的结构和光谱分析,类似于目前或不久的未来相关表面工艺:用于光学光刻的直接光激发;由(超)短激光脉冲诱导的至数百K的表面电子温度的光激发,持续几个ps的时间跨度;在电子束曝光中,由各种能量的碰撞电子激发;由隧道电流产生的低能电子的激发。该仪器的低温能力将允许冻结由各种激发模式产生的反应中间体。因此,它们可用于STM的结构和光谱分析。产物之间的比较提供了对所用反应的基本步骤的重要洞察。拟议的仪器将被纳入UCR的教育计划,在PI为化学、物理和工程专业的高年级本科生和研究生提供的半导体工艺入门课程的背景下。此外,它还将提供给研究生用于他们的研究项目。
英文摘要
This award from the Major Research Instrumentation Program supports the development of a high-resolution low-temperature scanning tunneling microscope (STM) for research and education in surface processing at the University of California-Riverside (UCR). The research apparatus is based on an STM with a temperature range between 10K and 350K. It will be set up to allows for in-situ sample excitation with laser pulses and electrons of several tens of electronvolts to 1kilo electronvolts energy. It will be used for the structural and spectroscopic analysis of adsorbates and films before and after their excitation similar to presently used or in the near future relevant surface process: direct optical excitation as it is used in optical lithography; optical excitation of the surface electronic temperatures to several hundred K for a time span of a few ps as induced by (ultra-)short laser pulses; excitation by impinging electrons of various energies as it is used in electron-beam lithography; excitation by low energy electrons from the tunneling current. The low-temperature capability of the instrument will permit to freeze out the reaction intermediates created by the various excitation modes. They are thus available for structural and spectroscopic analysis by STM. A comparison between the resultant products offers important insight into the elementary steps of the used reactions. The proposed instrument will be incorporated into the educational program of UCR in the context of an introductory course to semiconductor processing offered by the PI for senior undergraduate and graduate students of chemistry, physics and engineering. Additionally, it will be available to graduate students for their research projects. This award from the Major Research Instrumentation Program supports the development of a high-resolution low-temperature scanning tunneling microscope (STM) for research and education in surface processing at the University of California-Riverside (UCR). The research apparatus is based on an STM with a temperature range between 10K and 350K. It will be set up to allows for in-situ sample excitation with laser pulses and electrons of several tens of electronvolts to 1kilo electronvolts energy. It will be used for the structural and spectroscopic analysis of adsorbates and films before and after their excitation similar to presently used or in the near future relevant surface process: direct optical excitation as it is used in optical lithography; optical excitation of the surface electronic temperatures to several hundred K for a time span of a few ps as induced by (ultra-)short laser pulses; excitation by impinging electrons of various energies as it is used in electron-beam lithography; excitation by low energy electrons from the tunneling current. The low-temperature capability of the instrument will permit to freeze out the reaction intermediates created by the various excitation modes. They are thus available for structural and spectroscopic analysis by STM. A comparison between the resultant products offers important insight into the elementary steps of the used reactions. The proposed instrument will be incorporated into the educational program of UCR in the context of an introductory course to semiconductor processing offered by the PI for senior undergraduate and graduate students of chemistry, physics and engineering. Additionally, it will be available to graduate students for their research projects.
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