SBIR Phase II: A Source for High Rate Growth of Gallium Nitride Films

这个小型企业创新研究第二阶段项目将开发一种中性、高通量/通量的氮原子束光源，用于大面积高速生长III-V氮化物半导体材料。拟议的信号源基于专有的中喷式技术。这项技术采用了涡流包含的无电极放电，而不是传统来源中常用的介质管。利用5000摄氏度的温度来生产1021个氮原子的MIDJET技术已经被证明。这比目前可用的来源产生的能量高出2-3个数量级。它特别适用于金属有机化学气相沉积(MOCVD)系统，在这种系统中，它既可以实现高增长率，又可以消除氨的使用。MIDJET将被改装用于MOCVD反应堆，并展示该系统以每小时至少10微米的速度生长氮化镓的能力。该项目将开发一种免费、高通量/通量的氮原子束，用于生长III-V氮化物材料，可以取代现有的基于等离子体的工具。随着高质量材料在更大面积上的更高增长率，基于MIDJET的系统将被应用于制造大功率/高温半导体器件和蓝色照明光源(包括用于平板显示器的光源)。

This Small Business Innovation Research Phase II Project will develop a neutral, high flux/fluence nitrogen atom beam source for application to the high rate growth of III-V nitride semi-conducting materials over large areas. The proposed source is based on proprietary MID-JET technology. This technology employs an electrode-less discharge contained by vortex flow, rather than a dielectric tube commonly used in traditional sources. MIDJET technology utilizing a temperature of 5000 C to produce1021 nitrogen atoms has been demonstrated. This is 2-3 orders of magnitude higher than that generated by currently available sources. It is particularly applicable to Metal Organic Chemical Vapor Deposition (MOCVD) systems, where it will allow both high growth rate and the elimination of the use of ammonia. The MIDJET will be adapted for use in a MOCVD reactor and a demonstration made of the system's ability to grow gallium nitride at a rate of at least 10 microns per hour. This project will develop a charge-free, high flux/fluence nitrogen atom beam for the growth of III-V nitride materials which can replace existing plasma-based tools. With higher growth rates of high quality material over larger areas, systems based on the MIDJET will have with application to the fabrication of high power/high temperature semiconductor devices and blue illumination sources (including those for flat panel displays).