Microwave and Radio Frequency Rapid Electromagnetic Induction Heating (EMIH) of Silicon Wafers

为了减少下一代半导体器件处理的热预算(时间、温度)，人们对硅的短期快速热处理(RTP)产生了浓厚的兴趣。RTP最重要的应用之一是形成CMOS栅堆栈源极区和漏极区。另一个应用是用于制造微机械和功率微电子设备的晶片的键合。这项建议要求支持微波和射频(RF)快速电磁感应加热(EMIH)硅的基础研究。EMIH将为晶片键合提供有价值和独特的能力。此外，EMIH可能是唯一可行的方法，以使超低注入杂质区达到制造下一代高密度VLSI集成电路(所谓的100 nm技术节点)所需的规格。研究计划包括对硅片的快速微波和射频EMIH的研究。例如，初步数据表明，超浅注硼晶片的EMIH尖峰退火优于传统的LAMP RTP。对超浅注硼晶片的实验被提出，以确定EMIH RTP到底有多有效，并阐明导致所观察到的优越性能的非传统机制。同样，初步结果表明，EMIH可以非常快速地粘合晶片，而不需要中间胶层。这项研究将更彻底地确定键合的质量，获得良好键合所需的最低时间和温度，多层晶片堆叠键合的前景，以及解释在射频EMIH过程中如何获得均匀的强键合的机制，即使在径向温度梯度很大的情况下也是如此。支持与领先的半导体制造行业组织的合作将为实验设计和结果分析提供关键输入，并为学生提供宝贵的指导。这些合作还将通过提供来自在该技术领域拥有无与伦比的经验和专业知识的机构提供的超低密度植入晶片和退火后表征来利用赠款资源。

The need to reduce the thermal budgets (time, temperature) of next generation semiconductor device processing has created a significant interest in short-term rapid thermal processing (RTP) of silicon. One of the most important applications for RTP is the formation of the source and drain regions of CMOS gate stacks. Another application is the bonding of wafers for fabrication of micromechanical and power microelectronic devices. This proposal requests support for basic research of microwave and radio frequency (RF) rapid electromagnetic induction heating (EMIH) of Si. EMIH would provide valuable and unique capabilities for wafer bonding. Moreover, EMIH may be the only viable method to anneal ultrashallow implanted impurity dopant regions to the specifications required to manufacture the next generation of high density VLSI integrated circuits (the so-called 100 nm technology node).The research program involves investigations of rapid microwave and RF EMIH of Si wafers. For example, initial data indicate that EMIH spike-annealing of ultra-shallow boron-implanted wafers is superior to conventional lamp RTP. Experiments with ultra-shallow boron-implanted wafers are proposed to establish just how effective EMIH RTP can be, and to elucidate the unconventional mechanisms responsible for the observed superior performance. Similarly, initial results indicate that EMIH enables very rapid wafer bonding without the need for intermediate glue layers. The research will more thoroughly determine the quality of the bond, the minimum time and temperature required to obtain a good bond, the prospects for multi-level wafer stack bonding, and the mechanisms that explain how uniformly strong bonds are obtained during RF EMIH, even with significant radial temperature gradients.Supporting collaborations with leading semiconductor fabrication industrial organizations will provide critical input to experimental design and results analysis, and valuable mentorship of students. These collaborations will also leverage grant resources by providing sources of ultrashallow implanted wafers and post-anneal characterization from institutions with unparalleled experience and expertise in this technology area.