MRI/ECS: Development of Wide Band Gap Semiconductor Materials Testing System Based on Light Induced Transient Grating Technique

根据ECS-0216323“基于光致瞬变光栅技术的宽带隙半导体材料测试系统的研制”的建议，我们提出了一种独特的基于光致瞬变光栅技术的宽带隙半导体材料测试系统。该系统将使我们能够获得有关宽禁带半导体的块状衬底、外延层和异质结构的材料特性的详细信息，从而优化用于检测危险生物物质的大功率电子设备、固态照明和UV发射器和探测器应用的设备设计。特别是，我们将评估衬底材料和表面准备，以及LED、激光二极管和晶体管的缓冲层和外延层。利用该系统对非平衡复合和输运参数的研究将使我们能够优化异质结构和量子阱的生长制度和结构设计，并优化n型和p型掺杂制度和条件。这种独特的系统允许无损表征技术，可以弥合宽禁带半导体的光学和电子表征之间的差距。我们认为，能够在深紫外光谱范围内工作的光致瞬变光栅技术是提取载流子产生、陷阱、复合和扩散特性的最好方法。该系统在几个方面将是独一无二的：它将允许亚皮秒脉冲，将具有亚皮秒时间分辨率；在200-800 nm范围内的可调性，以及自动操作。它将允许我们同时施加外加电场和机械变形。该系统将在深紫外光谱范围内工作，并将用于GaN、AlGaN、AlInGaN和碳化硅材料、AlInGaN/GaN异质结和AlInGaN基高Al含量量子阱结构的研究

Abstract for proposal ECS-0216323 "Development of Wide Band Gap Semiconductor Materials Testing System Based on Light Induced Transient Grating Technique" We propose to develop a unique Wide Band Gap Semiconductor Materials Testing System Based on Light Induced Transient Grating Technique. This system will allow us to obtain detailed information about materials properties of bulk substrates, epitaxial layers, and heterostructures for wide band gap semiconductors enabling the optimization of the device design for high power electronics, solid state lighting, and UV emitters and detector applications for detection of hazardous biological substances. In particular, we will evaluate substrate material and surface preparation, and buffer and epitaxial layers for LEDs, laser diodes and transistors. The studies of non-equilibrium recombination and transport parameters that will be made possible with this system will allow us to optimize growth regimes and structure design for heterostructures and quantum wells and to optimize n-type and p-type doping regimes and conditions. This unique system allows for nondestructive characterization technique, which could bridge the gap between optical and electronic characterization of wide band gap semiconductors. We believe that light-induced transient grating technique capable of performing in deep UV spectral range is the best method to extract carrier generation, trapping, recombination and diffusion characteristics. This system will be unique in several respects: it will allow for sub-picosecond pulses, will have sub-picosecond time resolution; tunability in 200-800 nm range, and automatic operation. It will allow us to apply both external electric field and mechanical deformation. The proposed system will perform in deep UV spectral range and will be used for the studies of GaN, AlGaN, AlInGaN and SiC materials, AlInGaN/GaN heterostructures and AlInGaN-based high Al content quantum well structures