MRI: Development of Terahertz Electronics Characterization System

本项目的目标是开发独特的太赫兹电子表征（TEC）系统，以实现对先进纳米结构的新型太赫兹电子材料的研究。该系统是开发太赫兹电子器件和系统的先决条件。智力价值：拟议的TEC系统将独特地适用于先进纳米结构的太赫兹电子材料和器件的表征以及太赫兹基础科学研究。这将包括太赫兹频率和弹道器件中电子传输的研究，热电子的太赫兹响应，太赫兹频率下的非线性响应，器件-电路相互作用，等离子体晶体物理学，近场成像，太赫兹系统参数提取，生物分子研究，太赫兹和亚太赫兹集成电路的生物对象研究，高场亚皮秒传输的基础研究，碳基和拓扑绝缘体电子器件（包括单层、少层和多层石墨烯THz器件）的THz表征。更广泛的影响：新兴的先进纳米结构电子THz器件将在国土安全、生物技术、医学和工业控制等领域实现大量新应用，具有数十亿美元的市场潜力。即使在这些应用之外，首先开发THz电子产品的国家也将控制电子工业的未来。所提出的太赫兹电子表征系统将允许在操作条件下（即，在电压偏置和/或电流流动下）对太赫兹纳米结构进行非破坏性表征。这是验证，理解和优化THz应用的新材料和器件以及频谱扩展以大幅增加带宽的关键。我们的初步测量已经证明了亚波长太赫兹成像的潜力，检测微小漏电流的能力，偏置下的高速IC测试，以及在纳米级估计结工作温度的潜力。采用裂缝周期天线和晶体管阵列应提高设备的灵敏度的数量级。

The goal of this project is to develop unique Terahertz Electronics Characterization (TEC) System to enable investigations of advanced nanostructured novel THz electronics materials.This system is a prerequisite for developing electronic devices and systems operating at terahertz frequencies.Intellectual Merit: The proposed TEC System will be uniquely suited for characterization of advanced nanostructured THz electronics materials and devices and fundamental THz science studies. This will include studies of electron transport at THz frequencies and in ballistic devices, THz response of hot electrons, non-linear response at THz frequencies, device-circuit interaction, plasmonic crystal physics, near field imaging, THz system parameter extraction, studies of biomolecules, signatures of biological objects investigations of THz and sub-THz integrated circuits, fundamental research on high field subpicosecond transport, THz characterization of carbon-based, and topological insulator electronics (including single layer, few layer, and multiple layer graphene THz devices. Broader Impacts: The emerging advanced nanostructure electronic THz devices will enable massive new applications in homeland security, biotechnology, medicine, and industrial controls with multi billion market potential. Even beyond these applications, the nation to first develop THz electronics will control the future of electronics industry. The proposed THz electronic characterization system will allow for non-destructive characterization of THz nanostructures under operating conditions (i.e. under voltage bias and/or current flowing). This is the key for validation, understanding, and optimization of novel materials and devices for THz applications and for spectrum expansion for dramatic increase in bandwidth. Our preliminary measurements have already demonstrated potential for subwavelength terahertz imaging, ability to detect minute leakage currents, testing of high-speed ICs under bias, and potential for estimating the junction operating temperature at a nanoscale. Employing slit-periodic antennas and arrays of transistors should improve the device sensitivity by orders of magnitude.