MRI: Development of Terahertz Electronics Characterization System

该项目的目标是开发独特的太赫兹电子表征（TEC）系统，以研究先进的纳米结构新型太赫兹电子材料。该系统是开发在太赫兹频率上工作的电子设备和系统的先决条件。智力优势：提议的TEC系统将独特地适合于表征先进的纳米结构太赫兹电子材料和器件以及基础太赫兹科学研究。这将包括太赫兹频率和弹道器件中电子传输的研究、热电子的太赫兹响应、太赫兹频率下的非线性响应、器件-电路相互作用、等离子体晶体物理、近场成像、太赫兹系统参数提取、生物分子研究、太赫兹和亚太赫兹集成电路的研究、高场亚皮秒传输的基础研究、碳基、拓扑绝缘体电子器件（包括单层、多层和多层石墨烯太赫兹器件）。更广泛的影响：新兴的先进纳米结构电子太赫兹器件将在国土安全、生物技术、医学和工业控制方面实现大规模的新应用，具有数十亿美元的市场潜力。除了这些应用之外，最先开发太赫兹电子的国家将掌握电子产业的未来。所提出的太赫兹电子表征系统将允许在操作条件下（即在电压偏置和/或电流流动下）对太赫兹纳米结构进行非破坏性表征。这是验证、理解和优化用于太赫兹应用的新型材料和器件以及用于带宽急剧增加的频谱扩展的关键。我们的初步测量已经证明了亚波长太赫兹成像的潜力，检测微小泄漏电流的能力，在偏置下测试高速集成电路的能力，以及在纳米尺度上估计结工作温度的潜力。采用狭缝周期天线和晶体管阵列可以将器件灵敏度提高几个数量级。

The goal of this project is to develop unique Terahertz Electronics Characterization (TEC) System to enable investigations of advanced nanostructured novel THz electronics materials.This system is a prerequisite for developing electronic devices and systems operating at terahertz frequencies.Intellectual Merit: The proposed TEC System will be uniquely suited for characterization of advanced nanostructured THz electronics materials and devices and fundamental THz science studies. This will include studies of electron transport at THz frequencies and in ballistic devices, THz response of hot electrons, non-linear response at THz frequencies, device-circuit interaction, plasmonic crystal physics, near field imaging, THz system parameter extraction, studies of biomolecules, signatures of biological objects investigations of THz and sub-THz integrated circuits, fundamental research on high field subpicosecond transport, THz characterization of carbon-based, and topological insulator electronics (including single layer, few layer, and multiple layer graphene THz devices. Broader Impacts: The emerging advanced nanostructure electronic THz devices will enable massive new applications in homeland security, biotechnology, medicine, and industrial controls with multi billion market potential. Even beyond these applications, the nation to first develop THz electronics will control the future of electronics industry. The proposed THz electronic characterization system will allow for non-destructive characterization of THz nanostructures under operating conditions (i.e. under voltage bias and/or current flowing). This is the key for validation, understanding, and optimization of novel materials and devices for THz applications and for spectrum expansion for dramatic increase in bandwidth. Our preliminary measurements have already demonstrated potential for subwavelength terahertz imaging, ability to detect minute leakage currents, testing of high-speed ICs under bias, and potential for estimating the junction operating temperature at a nanoscale. Employing slit-periodic antennas and arrays of transistors should improve the device sensitivity by orders of magnitude.