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EAGER: Hot electron devices based on "beyond graphene" materials systems

EAGER: Hot electron devices based on "beyond graphene" materials systems
EAGER:基于“超越石墨烯”材料系统的热电子器件
批准号:
1346786
负责人:
Michael Shur
金额:
$21.94万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-09-01 至 2015-08-31

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中文摘要
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英文摘要
The objective of this program is to explore the feasibility of novel family of microwave and millimeter wave devices using hot carrier transport in MoS2 and related compounds. The band structure of MoS2 has should enable Negative Differential Resistance instability. Since MoS2 can be cheaply produced in large area sheets, this new technology could have key advantages for wireless sensing biomedical, homeland security, and "Internet of Things," applications. It is high-payoff and transformative because, if successful, it will enable a whole new generation of layered-to-bulk microwave and millimeter wave "beyond graphene" sources, detectors, and sensors, at a fraction of the cost of existing components. The intellectual merit of the project is in understanding of hot carrier transport in materials "beyond graphene", and in developing novel principles of operation for layered ambipolar devices for photonic and electro-optic applications.The broader impact of the project will be in gaining understanding of new fundamental physics of hot carrier and ambipolar "beyond graphene" nanostructures, enabling the development of novel microwave and millimeter wave devices on large scale at a fraction of the cost of existing devices; in enabling sensing applications at a large scale, in developing new approaches for applications of a large variety of "beyond graphene" materials, in seeding the "beyond graphene" electronics industry; in creating new high-tech American jobs, and in training the next generation of scientists and engineers through "beyond graphene" related new curriculum and outreach at all levels - from K to 12 to post graduate education.
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Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies (RJUSE TeraTech-2017) - October 02-06, 2017, Troy, NY
  • 批准号:
    1741755
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.0万
  • 财政年份:
    2017
  • 负责人:
    Michael Shur
  • 依托单位:
The Russia-Japan-USA Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies. Held June 17-21, 2014, University at Buffalo, NY.
  • 批准号:
    1443131
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.6万
  • 财政年份:
    2014
  • 负责人:
    Michael Shur
  • 依托单位:
Workshop on 'Frontiers in Electronics' (WOFE-13)) to be held in San Juan, Puerto Rico on December 17-20, 2013
  • 批准号:
    1346784
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.0万
  • 财政年份:
    2013
  • 负责人:
    Michael Shur
  • 依托单位:
MRI: Development of Terahertz Electronics Characterization System
  • 批准号:
    1338018
  • 项目类别:
    Standard Grant
  • 资助金额:
    $64.42万
  • 财政年份:
    2013
  • 负责人:
    Michael Shur
  • 依托单位:
国内基金
海外基金
HOT型高增益带宽积碲镉汞中波红外雪崩探测器研究