EAGER: Hot electron devices based on "beyond graphene" materials systems
EAGER:基于“超越石墨烯”材料系统的热电子器件
基本信息
- 批准号:1346786
- 负责人:
- 金额:$ 21.94万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2013
- 资助国家:美国
- 起止时间:2013-09-01 至 2015-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this program is to explore the feasibility of novel family of microwave and millimeter wave devices using hot carrier transport in MoS2 and related compounds. The band structure of MoS2 has should enable Negative Differential Resistance instability. Since MoS2 can be cheaply produced in large area sheets, this new technology could have key advantages for wireless sensing biomedical, homeland security, and "Internet of Things," applications. It is high-payoff and transformative because, if successful, it will enable a whole new generation of layered-to-bulk microwave and millimeter wave "beyond graphene" sources, detectors, and sensors, at a fraction of the cost of existing components. The intellectual merit of the project is in understanding of hot carrier transport in materials "beyond graphene", and in developing novel principles of operation for layered ambipolar devices for photonic and electro-optic applications.The broader impact of the project will be in gaining understanding of new fundamental physics of hot carrier and ambipolar "beyond graphene" nanostructures, enabling the development of novel microwave and millimeter wave devices on large scale at a fraction of the cost of existing devices; in enabling sensing applications at a large scale, in developing new approaches for applications of a large variety of "beyond graphene" materials, in seeding the "beyond graphene" electronics industry; in creating new high-tech American jobs, and in training the next generation of scientists and engineers through "beyond graphene" related new curriculum and outreach at all levels - from K to 12 to post graduate education.
该计划的目的是探索在MoS 2和相关化合物中使用热载流子传输的新型微波和毫米波器件的可行性。MoS 2的能带结构应该能够使负微分电阻不稳定。由于MoS 2可以廉价地生产在大面积的片材上,这种新技术可能在无线传感生物医学、国土安全和“物联网”应用方面具有关键优势。这是高回报和变革性的,因为如果成功的话,它将使全新一代的分层到散装微波和毫米波“超越石墨烯”源,探测器和传感器成为可能,而成本只是现有组件的一小部分。该项目的智力价值在于理解“超越石墨烯”材料中的热载流子输运,并开发用于光子和电光应用的分层双极器件的新操作原理。该项目的更广泛影响将是理解热载流子和双极“超越石墨烯”纳米结构的新基础物理,能够以现有器件的一小部分成本大规模地开发新型微波和毫米波器件;在实现大规模的传感应用中,在开发用于各种各样的“超越石墨烯”材料的应用的新方法中,在播种“超越石墨烯”的电子产业;在创造新的高科技美国就业机会,并在培训下一代科学家和工程师通过“超越石墨烯”相关的新课程和推广各级-从K到12到研究生教育。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Michael Shur其他文献
Subwavelength detection of terahertz radiation using GaAs HEMTs
使用 GaAs HEMT 进行太赫兹辐射的亚波长检测
- DOI:
10.1109/icsens.2009.5398312 - 发表时间:
2009 - 期刊:
- 影响因子:0
- 作者:
T. Elkhatib;A. Muravjov;Dmitry Veksler;W. Stillman;Xi;Michael Shur;V. Kachorovskii - 通讯作者:
V. Kachorovskii
IR cryogenics system updates including the vibration issues
红外低温系统更新,包括振动问题
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
Taiichi Otsuji;Akira Satou;Takayuki Watanabe;Stephane Albon Boubanga-Tombet;Alexander Dubinov;Vyacheslav V. Popov;Michael Shur;and Victor Ryzhii;Takahiro Okamura - 通讯作者:
Takahiro Okamura
Nanometer Scale Complementary Silicon MOSFETs as Detectors of Terahertz and Sub-terahertz Radiation
纳米级互补硅 MOSFET 作为太赫兹和亚太赫兹辐射探测器
- DOI:
10.1109/icsens.2007.4388556 - 发表时间:
2007 - 期刊:
- 影响因子:0
- 作者:
W. Stillman;Fernando Guarin;V. Kachorovskii;N. Pala;Sergey L. Rumyantsev;Michael Shur;Dmitry Veksler - 通讯作者:
Dmitry Veksler
Dyakonov-Shur Instability in Diamond Terahertz Field-Effect Transistors
- DOI:
10.1007/s10762-024-01028-2 - 发表时间:
2024-11-29 - 期刊:
- 影响因子:2.500
- 作者:
Muhammad Mahmudul Hasan;Nezih Pala;Michael Shur - 通讯作者:
Michael Shur
Discovery of Coulomb-Drag Instability of Graphene Dirac Plasmons
石墨烯狄拉克等离子体激元库仑阻力不稳定性的发现
- DOI:
10.1109/irmmw-thz50927.2022.9966853 - 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
Victor Ryzhii;Maxim Ryzhii;Akira Satou;Vladimir Mitin;Michael Shur;and Taiichi Otsuji - 通讯作者:
and Taiichi Otsuji
Michael Shur的其他文献
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{{ truncateString('Michael Shur', 18)}}的其他基金
Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies (RJUSE TeraTech-2017) - October 02-06, 2017, Troy, NY
俄罗斯-日本-美国-欧洲基础研讨会
- 批准号:
1741755 - 财政年份:2017
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
The Russia-Japan-USA Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies. Held June 17-21, 2014, University at Buffalo, NY.
俄日美基础研讨会
- 批准号:
1443131 - 财政年份:2014
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
Workshop on 'Frontiers in Electronics' (WOFE-13)) to be held in San Juan, Puerto Rico on December 17-20, 2013
“电子前沿”研讨会 (WOFE-13)) 将于 2013 年 12 月 17 日至 20 日在波多黎各圣胡安举行
- 批准号:
1346784 - 财政年份:2013
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
MRI: Development of Terahertz Electronics Characterization System
MRI:太赫兹电子表征系统的开发
- 批准号:
1338018 - 财政年份:2013
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
Workshop on 'Frontiers in Electronics' (WOFE-11). To be held in San Juan, Puerto Rico during 18-21 December 2011.
“电子前沿”研讨会(WOFE-11)。
- 批准号:
1208750 - 财政年份:2012
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
I-Corps: Silicon Terahertz Electronics
I-Corps:太赫兹硅电子器件
- 批准号:
1157515 - 财政年份:2011
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
Russian-American Workshop on Emerging Trends in Bioelectronics. To be held at St. Petersburg, Russia, on June 27-29, 2011.
俄美生物电子学新兴趋势研讨会。
- 批准号:
1138284 - 财政年份:2011
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
EAGER: Novel Highly Sensitive Detectors using Nanostructure Arrays for Advanced Electronics Systems
EAGER:使用纳米结构阵列用于先进电子系统的新型高灵敏度探测器
- 批准号:
1106444 - 财政年份:2011
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
CONNECTION ONE Rensselaer Research Site Renewal
连接一号伦斯勒研究基地更新
- 批准号:
1134723 - 财政年份:2011
- 资助金额:
$ 21.94万 - 项目类别:
Continuing Grant
Workshop on Frontiers in Electronics (WOFE-09) To be Held in Rincon, Puerto Rico on December 13-16, 2009
电子前沿研讨会 (WOFE-09) 将于 2009 年 12 月 13 日至 16 日在波多黎各林康举行
- 批准号:
0939894 - 财政年份:2009
- 资助金额:
$ 21.94万 - 项目类别:
Standard Grant
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