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NER: Fully Self-assembled Nanowire Based Devices

NER: Fully Self-assembled Nanowire Based Devices
NER:完全自组装的基于纳米线的设备
批准号:
0303801
负责人:
Jun Nogami
金额:
$10.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-07-15 至 2005-06-30

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中文摘要
翻译
纳米线是稀土金属硅化物在硅(001)表面生长过程中自组装形成的。它们具有纳米级的横向尺寸,具有金属导电性,在超高真空(UHV)中生长后可在空气中存活。它们可以平行阵列生长,也可以简单的交叉栅格生长。各种几何形状的纳米线之间的连接自发产生。该项目的目标是快速跟踪作为器件的外延纳米线结的发展。电可寻址纳米线和纳米线结将被制造出来,并评估它们作为基于纳米线的器件的有用性。特别是,他们希望开发一种完全自组装的设备,从纳米级的有源区一直到宏观的接触垫,而不需要操纵单个元件。具体目标将是证明有可能制造完全自组装的基于纳米线的设备,并在授权期内对至少一个这样的设备进行电学测量。有许多强大的技术障碍需要克服,其中最重要的是所有制造步骤必须与纳米线生长步骤所规定的超高真空工艺兼容。纳米线的生长和原位原子分辨率的研究将继续进行。将探索制造特高压和非特高压电触点的方法。电学测量将在单个纳米线和纳米线结上进行,使用液氦低温恒温器和新的低温探测站的组合。作为他们教育和推广活动的一部分,所有成员都参与开发适合K-12以及本科生和研究生教育的不同级别的与纳米技术有关的教材。将与兰辛的一家科学博物馆合作,开发适合年幼学童的展示概念。所有的教育和宣传活动都是为了在教育过程的所有阶段提高对纳米技术的普遍认识。这项提案涉及纳米结构、新现象和量子控制领域的问题。
英文摘要
Nanowires are formed by self-assembly during growth of rare earth metal silicides on the silicon (001) surface. They have nanometer scale lateral dimension, show metallic conduction, and survive exposure to air after growth in ultra high vacuum (UHV). They can be grown in parallel arrays, or simple crossed grids. Junctions between nanowires of a variety of geometries spontaneously arise. The objective of this project is to fast track the development of epitaxial nanowire junctions as devices. Electrically addressablenanowires and nanowire junctions will be fabricated and evaluated as to their usefulness as nanowire based devices. In particular, the hope is to develop a fully self-assembled device, from the nanometer scale active area all the way to macroscopic contact pads without the need for manipulation of individual elements. The specific goal will be to demonstrate that it is possible to make a fully self-assembled nanowire based device, and to have electrical measurements on at least one such device within the grant period. There are formidable technical hurdles to be surmounted, foremost among which is the fact that all fabrication steps must be compatible with the UHV processing that is dictated by the nanowire growth step. Growth of the nanowires and in-situ atomic resolution studies will be ongoing. Methods for fabricating electrical contacts, both UHV and non-UHV based, will be explored. Electrical measurements will be done ex-situ on both individual nanowires and nanowire junctions, using a combination of liquid helium cryostats and a new cryogenic probing station.As part of their education and outreach activities, all members involved in developing nanotechnology related teaching materials at different levels that will be appropriate for K-12, as well as undergraduate and graduate education. Concepts for displays suitable for very young schoolchildren will be developed in collaboration with a science museum in Lansing. All of the education and outreach activity is intended to raise the general awareness of nanotechnology at all stages of the educational process. This proposal addresses issues in the area of Nanoscale Structures, Novel Phenomena, and Quantum Control.
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Epitaxial Growth of Uniaxially and Biaxially Mismatched Silicide Films on Silicon
  • 批准号:
    0305472
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $43.33万
  • 财政年份:
    2003
  • 负责人:
    Jun Nogami
  • 依托单位:
Electromigration of Metals on the Silicon Surface
  • 批准号:
    9223764
  • 项目类别:
    Standard Grant
  • 资助金额:
    $14.85万
  • 财政年份:
    1993
  • 负责人:
    Jun Nogami
  • 依托单位:
海外基金