CONFERENCE: Support of Student Attendees at the Eleventh International Conference on Narrow Gap Semiconductors being held in Buffalo, NY, June 16-20, 2003.

我们正在为第十一届窄禁带半导体国际会议(NGS-11)寻求资金支持，该会议将于2003年6月16日至20日在纽约州立大学布法罗分校举行。具体地说，我们希望申请3,500美元，以支持学生参加NGS-11。我们将大力鼓励来自妇女、少数民族和残疾人等代表不足的群体的有才华的年轻学生参加。美国自1995年以来就没有主办过NGS会议，如果能把这个重要的国际会议带回美国，让我们的研究人员接触到这一领域的前沿研究，那将是非常好的。以往的NGS会议分别在美国达拉斯(1970年)、法国尼斯(1973年)、波兰华沙(1977)、奥地利林茨(1981)、美国盖瑟斯堡(1989)、英国南安普顿(1992)、美国圣达菲(1995年)、上海、中国(1997年)、德国柏林(1999年)和日本金泽(2001年)举行。这次会议将汇集专家讨论窄禁带半导体和半导体低频激发科学技术的最新进展和发现。主要的材料体系是：6.1A III-V半导体(InAs、GaSb、AlSb及其合金)、InSb基合金和异质结(例如InSb、InAlSb、InAsSb)、铁磁性窄禁带III-V半导体(例如InMnAs、GaMnSb)、II-VI窄禁带半导体(例如HgCdTe)、II-VI/III-V异质结构(如CDMnSe/InAs)、铅盐(IV-VI)材料和异质结构(例如PbSe、PbTe、PbSe/PbEuSe除了晶体生长/制备方法和研究外，该计划还将涵盖广泛的物理现象和器件应用，包括：自旋相关效应、红外源/探测器、千兆赫和太赫兹现象和器件、半导体与超导体或铁磁金属的混合结构、介观现象、热载流子传输、量子霍尔效应、子带间跃迁和朗道能级光谱。组织和计划委员会由在窄间隙半导体方面拥有强大的持续研究计划的成员组成。被邀请的演讲者将包括该领域许多最优秀的研究人员，包括实验家和理论家，他们来自基础和应用研究领域。此外，纽约州立大学布法罗分校的Emmanuel I.Rashba教授和加州大学圣巴巴拉分校的Herbert Kroemer教授已经同意在大会的全体会议上发表演讲。在为期五天的会议中，我们计划进行大约15次应邀演讲和60次投稿演讲，以及大约100张海报。我们预计将有大约200人参加。将不会有并行会话。本会议与专门讨论类似议题的其他会议没有任何时间重叠，我们预计所有主要发言者都将能够出席。申请的3 500美元资金将全部用于支持学生参与者：为选定的研究生提供部分交通服务。我们计划挑选7名学生，每个学生的平均资助为500美元。学生的报告将包括在期末报告中。

We are seeking financial support for the Eleventh International Conference on Narrow Gap Semiconductors (NGS-11), which will be held in Buffalo, New York, June 16 - 20, 2003 on the campus of the University at Buffalo, the State University of New York (SUNY). Specifically, we would like to request $3,500 to support student attendance at NGS-11. We will strongly encourage the participation of talented young students from under-represented groups such as women, minorities, and the disabled.The United States has not hosted a NGS Conference since 1995 and it will be very good to bring back this major international conference to this country to expose our researchers to frontier research in this area. Previous NGS Conferences were held in Dallas, U.S.A. (1970), Nice, France (1973), Warsaw, Poland (1977), Linz, Austria (1981), Gaithersburg, U.S.A. (1989), Southampton, U.K. (1992), Santa Fe, U.S.A. (1995), Shanghai, China (1997), Berlin, Germany (1999), and Kanazawa, Japan (2001).This conference will bring together experts to discuss recent advances and discoveries in the science and technology of narrow gap semiconductors and low frequency excitations in semiconductors. Materials systems of primary interest are: 6.1 A III-V semiconductors (InAs, GaSb, AlSb and their alloys), InSb-based alloys and heterostructures (e.g., InSb, InAlSb, InAsSb), ferromagnetic narrow-gap III-V semiconductors (e.g., InMnAs, GaMnSb), II-VI narrow-gap semiconductors (e.g., HgCdTe), II-VI/III-V heterostructures such as CdMnSe/InAs, lead salt (IV-VI) materials and heterostructures (e.g., PbSe, PbTe, PbSe/PbEuSe, PbTe/PbEuTe).In addition to crystal growth/fabrication methods and studies, the program will also cover a broad range of physical phenomena and device applications, including: spin-related effects, infrared sources/detectors, gigahertz and terahertz phenomena and devices, hybrid structures combining semiconductors with superconductors or ferromagnetic metals, mesoscopic phenomena, hot carrier transport, quantum Hall effect, intersubband transitions, and Landau level spectroscopy. The Organizing and Program Committee consists of members who have strong on-going research programs on narrow gap semiconductors. Invited speakers will include many of the best researchers in this field, both from fundamental and applied research areas, including experimentalists and theorists. In addition, Prof. Emmanuel I. Rashba (University at Buffalo, SUNY) and Prof. Herbert Kroemer (University of California, Santa Barbara), two distinguished physicists in this area, have agreed to give the plenary talks of the Conference.During this five-day conference, we plan to have about 15 invited talks and 60 contributed talks as well as approximately 100 posters. We anticipate approximately 200 participants. There will be no parallel sessions. The Conference does not have any time overlap with other conferences devoted to similar topics, and we expect that all the key speakers will be able to come. The requested funding of $3,500 will be used entirely for supporting student participants: partial transportation for selected graduate students. We plan to select seven students with an average support of $500 per student. The students' reports will be included in the final report.