SBIR Phase I: Novel AlGaN-Based Structures for High-Efficiency and High-Power, Deep Ultraviolet Emitters

“这项小型企业创新研究第一阶段项目旨在开发工作波长为280纳米或更短的氮基半导体激光器。在第一阶段，将展示高效率和高功率紫外线发光二极管（UV LED），结合新型AlGaN量子阱（QW）结构，作为概念验证。LED结构将克服目前基于algan的UV发射器的大多数挑战。这些挑战包括包层p型掺杂的增强和QW层中非辐射复合的减少。该LED结构具有通过短周期高铝分数合金超晶格的小带传输载流子的独特优势。在这种结构中，可以通过调节量子阱的厚度和Al摩尔分数等参数来获得所需的紫外波长。该研究将由III-N分子束外延（MBE）组和半导体组共同努力进行。半导体紫外（UV）光源在聚合物固化、水净化、白光产生、投影显示、高记录密度光盘数据存储、光刻、生物制剂检测和非视距隐蔽通信等领域有着广泛的应用

`This Small Business Innovation Research Phase I project is directed toward the development of a nitride-based semiconductor laser operating at 280 nm or shorter. In Phase I, high-efficiency and high power ultraviolet light emitting diodes (UV LED), incorporating novel AlGaN quantum-well (QW) structures, will be demonstrated as the proof of concept. The LED structure will overcome most of the current challenges in AlGaN-based UV emitters. These challenges include enhanced p-type doping of the cladding layer and reduction of the non-radiative recombination in the QW layer. The LED structure has unique advantage of transporting carriers through miniband of a short-period high-Al-fraction alloy superlattice. In this structure, the desired UV wavelength can be obtained by adjusting QW parameters such as well thickness and Al mole fraction. The research will be carried out by a joint effort consisting of the III-N molecular beam epitaxy (MBE) group and the semiconductor group.Semiconductor ultraviolet (UV) optical sources have a wide variety of applications in polymer curing, water purification, white light generation, projection displays, high-recording-density compact disk data storage, photolithography, biological agent detection, and non-line-of-sight covert communications