Semiconductor Surfaces Free of Surface States for Nanoelectronic Applications

本研究旨在研究无表面态的半导体表面及其在纳米电子制造中的应用。这项研究的独特之处在于，它采用了价修复的概念，它消除了半导体表面上的悬挂键和应变键，从而消除了表面态，表面上有一层价修复原子层。这项研究将从根本上提高我们对半导体表面和界面的认识，并导致新的纳米电子器件和新的制造方法。例如，在n型硅(001)上实现了低肖特基势垒高度，从而实现了太赫兹纳米电子器件，即肖特基源漏互补的金属氧化物半导体场效应晶体管。其他重要的应用包括减少源/漏区的硅消耗，以及在下一代互补金属氧化物半导体场效应晶体管中抑制二氧化汞和硅之间的界面氧化。在基础科学方面，将在不同类型的表面态和它们相应的悬挂键之间建立明显的联系。关于金属和硅之间肖特基势垒高度(001)的几十年的数据将被更新。建议的主要教育活动包括由国际和平协会制定课程、参与促进社区经济发展的劳动力发展，以及参与新的纳米在边境倡议，以促进德克萨斯州和墨西哥边境的纳米技术教育和研究。提案描述了这些活动的详细计划，包括将这项研究的最新成果纳入电气工程课程；为边界纳米倡议的教育部分开发基于网络的教学；作为劳动力发展计划的一部分，为社区学院开发课程和教师培训；以及制定提案，以确保获得资金，以支持整个社区的劳动力发展举措。

This proposed research investigates semiconductor surfaces free of surface states and their applications in nanoelectronic fabrication. The uniqueness of this research is that it adopts the concept of valence-mending, which eliminates both dangling bonds and strained bonds, and thus surface states, on a semiconductor surface with an atomic layer of valence-mending atoms. This research will fundamentally improve our knowledge of semiconductor surfaces and interfaces and lead to new nanoelectronic devices and new fabrication methods. For example, low Schottky barrier heights are realized on n-type silicon (001), which enable a terahertz nanoelectronic device, the Schottky source/drain complementary metal-oxide-semiconductor field-effect transistor. Other important applications include reduction of silicon consumption over the source/drain regions and suppression of interfacial oxidation between hafnium dioxide and silicon in next-generation complementary metal-oxide-semiconductor field-effect transistors. On the basic science side, a clear link between different types of surface states and their corresponding dangling bonds will be established. The decades-old data on Schottky barrier height between metal and silicon (001) will be updated. Major educational activities proposed include curriculum development by the PI, participation in workforce development for economic development of the community, and participation in the new Nano-at-the-Border initiative to promote nanotechnology education and research to the Texas-Mexico border. The proposal describes the detailed plan for these activities, including the incorporation of recent results from this research to the electrical engineering curriculum; the development of web-based instruction for the educational component of the Nano-at-the-Border initiative; curriculum development and faculty training for community colleges as part of the workforce development plan; and proposal development to secure funds for supporting community-wide initiatives in workforce development.