High efficiency Schottky barrier silicon solar cells

高效率肖特基势垒硅太阳能电池

• 批准号: 1336297
• 负责人: Meng Tao
• 金额: $ 38.87万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-09-01 至 2017-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1336297&HistoricalAwards=false
• 关键词: efficiency; Schottky; barrier; silicon; solar

PI: Tao, MengProposal Number: 1336297Institution: Arizona State UniversityTitle: High efficiency Schottky barrier silicon solar cellsTo decrease the costs of photovoltaics-generated electricity below $1/Wp installed, the 2012 International Technology Roadmap for Photovoltaics (ITRPV) calls for thinner silicon substrates, less silver metallization per cell, and reduced recombination losses at the front and rear, with cell efficiencies for crystalline silicon between 20% and 24% by 2020. The roadmap emphasizes the need for new cell concepts suitable for achieving high efficiencies on thin wafers. Schottky barrier junction cells can provide both simplified low temperature processing and high efficiencies when Fermi level pinning at the metal-semiconductor interface is prevented. Only recently have both knowledge and processing techniques emerged that result in measured record-high Schottky barrier heights that reflect the known work function differences between metals and silicon. It therefore becomes possible to explore application of these techniques to create an interdigitated back point contact Schottky barrier based silicon solar cell with efficiency greater than 20% and target demonstrating laboratory cells with a process compatible with high volume solar cell manufacturing. This project will elucidate how the atomic-scale modification of the metal-silicon interface affects carrier transport and surface recombination velocity and determining through both experiments and device modeling how this knowledge can be translated into a high efficiency Schottky barrier solar cell with a simplified manufacturing process. This is a new solar cell structure which has been envisioned for decades, but only recently the science and technology have advanced to enable its demonstration. The research is a blend of materials science and electrical engineering with importance in both academia and industry.The demonstration of a simplified single junction silicon solar cell will help enable silicon photovoltaics to become a major part of the solution to the world?s energy problem. In conjunction with the NSF-DOE ERC for Quantum Energy and Sustainable Solar Technologies (QESST) at ASU, this project will have a clear path for industry input and technology transfer through our industry partners. In addition the project will make a targeted effort to increase the representation of American Indians in science and engineering as well as increase the awareness of local Arizona tribes on photovoltaic technologies.

Pi：Tao，Meng Proposal编号：1336297机构：亚利桑那州立大学标题：高效肖特基势垒硅太阳能电池为了将光伏发电的成本降低到1美元/WP以下，2012年国际光伏技术路线图(ITRPV)呼吁更薄的硅衬底，更少的每个电池的银金属化，以及降低前后的复合损耗，到2020年，晶体硅的电池效率在20%到24%之间。该路线图强调，需要新的电池概念，以实现薄片的高效率。肖特基势垒结电池在防止金属-半导体界面的费米能级钉扎时，既可以提供简化的低温工艺，又可以提供高效率。直到最近，才有知识和加工技术出现，导致测量出创纪录的高肖特基势垒高度，反映了金属和硅之间已知的功函数差异。因此，有可能探索这些技术的应用，以创建效率大于20%的交叉指背接触肖特基势垒硅太阳能电池，并以与大容量太阳能电池制造兼容的工艺来演示目标实验室电池。该项目将阐明金属-硅界面的原子尺度修饰如何影响载流子传输和表面复合速度，并通过实验和器件建模确定如何将这些知识转化为具有简化制造工艺的高效肖特基势垒太阳能电池。这是一种新的太阳能电池结构，几十年来一直在设想，但直到最近才有科学技术进步，使其能够进行示范。这项研究是材料科学和电气工程的结合，在学术界和工业界都具有重要意义。简化的单结硅太阳能电池的示范将有助于使硅光伏成为解决世界-S能源问题的主要部分。与亚利桑那州立大学的NSF-DOE量子能源和可持续太阳能技术研究中心(QESST)合作，该项目将通过我们的行业合作伙伴为行业投入和技术转让提供明确的途径。此外，该项目将作出有针对性的努力，增加美国印第安人在科学和工程领域的代表性，并提高亚利桑那州当地部落对光伏技术的认识。