Doping-Free Formation of p-n Junctions

p-n 结的无掺杂形成

• 批准号: 0620319
• 负责人: Meng Tao
• 金额: --
• 依托单位: University of Texas at Arlington
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-08-15 至 2011-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0620319&HistoricalAwards=false
• 关键词: Doping; Free; Formation; Junctions

Doping-Free Formation of p-n JunctionsPrincipal Investigator: Meng Tao (University of Texas at Arlington)Project SummaryThe objective of this research is to develop and understand a fundamentally-different approach to form p-n junctions in semiconductors. A p-n junction is traditionally formed by diffusion or implantation of a dopant into a semiconductor. The approach in this proposal does not involve any dopant, but atomic-scale engineering of a semiconductor surface to eliminate surface states. When a metal with a low work function is in contact with a p-type semiconductor of this kind, its surface is turned into the opposite type and a p-n junction is formed without doping.A p-n junction is an indispensable part in most modern semiconductor devices, which are the building blocks in the information technology. This research could fundamentally change the way semiconductor devices are fabricated today and enable new semiconductor devices with unprecedented features. A Small Business Innovation Research Phase I proposal has been submitted to apply this technique for energy-efficient manufacturing of semiconductor devices. Preliminary results suggest that such a doping-free p-n junction is possible. The research activities proposed include characterization and understanding of doping-free p-n junctions and methodology for demonstrating a negative Schottky barrier.The educational activities proposed include curriculum development by the principal investigator, student participation in this research, and services to semiconductor industry. The proposal describes a detailed plan for these activities, including incorporation of results from this project to the electrical engineering curriculum; a book chapter on this subject as supplemental reading materials for students; supervision of PhD, MS, and undergraduate students' research, with a special effort to recruit undergraduate students, many of whom are from underrepresented groups; and contribution to economic development of the community through university-industry collaborations.

无掺杂形成p-n结首席研究员：孟涛(德克萨斯大学阿灵顿分校)项目摘要这项研究的目的是开发和理解一种在半导体中形成p-n结的根本不同的方法。传统上，p-n结是通过在半导体中扩散或注入掺杂剂而形成的。这项提议中的方法不涉及任何掺杂剂，而是对半导体表面进行原子尺度的工程，以消除表面状态。当具有低功函数的金属与这种p型半导体接触时，它的表面变成相反的类型，形成不掺杂的p-n结。p-n结是大多数现代半导体器件中不可或缺的组成部分，是信息技术的基石。这项研究可能从根本上改变当今半导体器件的制造方式，并使新的半导体器件具有前所未有的功能。已经提交了一份小型企业创新研究第一阶段的提案，将这项技术应用于半导体设备的节能制造。初步结果表明，这种无掺杂的p-n结是可能的。建议的研究活动包括描述和理解无兴奋剂的p-n结和演示负肖特基势垒的方法。建议的教育活动包括首席研究人员的课程开发、学生参与这项研究以及对半导体行业的服务。该提案描述了这些活动的详细计划，包括将这一项目的结果纳入电气工程课程；设立一个关于这一主题的章节作为学生的补充阅读材料；监督博士、硕士和本科生的研究，特别努力招收本科生，其中许多人来自代表性不足的群体；以及通过大学与行业合作为社区的经济发展做出贡献。