课题基金 / 基金详情

CAREER: New Device Opportunities enabled by Polar Dielectric and Semiconductor Heteroepitaxy

CAREER: New Device Opportunities enabled by Polar Dielectric and Semiconductor Heteroepitaxy
事业:极性电介质和半导体异质外延带来的新器件机会
批准号:
0348271
负责人:
William Doolittle
金额:
$39.83万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-04-01 至 2009-03-31

项目摘要

项目成果

William Doolittle的其他基金

相似基金

相关文献

中文摘要
翻译
W.艾伦·杜利特尔,在此提出,合并多学科教育目标与创新研究,包括研究的一个全新的领域的创建;单晶铁电集成宽带隙半导体(WBGS)通过外延。在此倡议下开发的外延工具集,在WBGS上生长的薄膜铁电体和在铁电衬底上生长的薄膜WBGS为独特的器件和高度集成的器件系统开辟了大量的机会。将进行几种新型器件演示,包括具有III族氮化物晶体管和光电传感器的集成光电调制器,具有大大增强的速度(3倍)的新型表面声学器件,功率密度比当前技术水平高50-100倍的功率晶体管,具有智能相位和幅度控制的高速低压LiNbO 3光电调制器,独特的横向偏振工程器件,如深紫外频率转换器,横向偏振异质结构和横向光电探测器应用的pn结。支持全州范围内,历史上的农村和国际教育机会,也提出了一个“一个高中”的推广计划,全州范围内的远程学习计划的参与,以达到经济萧条地区的格鲁吉亚和教育合作与人才研究中心在意大利的形式。某些机构的具体障碍,多学科教育也确定,与解决方案proposed.The更广泛的影响,这一拟议的努力,包括外联少数民族的形式,暑期实习参与,教育和高中和初中学生的动机,通过拟议的“收养一所学校”计划,更好的多学科融合和改善部门之间的沟通,在格鲁吉亚技术,格鲁吉亚州的大学和世界各地的研究中心/大学。鉴于本文提出的几种装置的新奇,预计将形成新的公司,从而也提供经济效益。
英文摘要
The five-year career plan of W. Alan Doolittle, proposed herein, merges multidisciplinary education objectives with innovative research including the creation of an entirely new field of study; single crystal ferroelectrics integrated with wide bandgap semiconductors (WBGS) through epitaxy. The epitaxial toolsets developed under this initiative, thin film ferroelectrics grown on WBGS and thin film WBGS grown on ferroelectric substrates opens up a plethora of opportunities for unique devices and highly integrated systems of devices. Several novel device demonstrations will be undertaken including integrated optoelectronic modulators with III-Nitride transistors and photosensors, novel surface acoustic devices with greatly enhanced speed (3x), power transistors with 50-100 times higher power density than is currently state of the art, high speed, low voltage LiNbO3 optoelectronic modulators with intelligent phase and amplitude control, unique lateral polarization engineered devices such as deep UV frequency converters, lateral polarization heterostructures and lateral p-n junctions for photodetector applications. Support for statewide, historically rural and international education opportunities is also proposed in the form of an "Adopt-a-High-School" outreach program, statewide distance learning program participation to reach economically depressed regions of Georgia and an educational collaboration with a talented research center in Italy. Certain institute specific barriers to multidisciplinary education are also identified, with solutions proposed.The broader impact of this proposed effort includes outreach to minorities in the form of a summer internship participation, education and motivation of high school and junior high students thru the proposed "adopt-a-school" program, better multidisciplinary integration and improved communications among departments at Georgia Tech, universities in the state of Georgia and research centers/universities around the world. Given the novelty of several of the devices proposed herein, new companies are expected to form, providing an economic benefit as well.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Controlling AlInGaN/Silicon Interface Kinetics
  • 批准号:
    1710032
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.0万
  • 财政年份:
    2017
  • 负责人:
    William Doolittle
  • 依托单位:
I-Corps: Novel Engineered Substrate Technology for Low-Defect, High-Yield Visible/UV LEDS and Power Electronics
  • 批准号:
    1639823
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.96万
  • 财政年份:
    2016
  • 负责人:
    William Doolittle
  • 依托单位:
NSF: Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD). Date:February 16-19, 2014 at The Menger Hotel, San Antonio, TX.
  • 批准号:
    1408329
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.53万
  • 财政年份:
    2014
  • 负责人:
    William Doolittle
  • 依托单位:
Doctoral Dissertation Research: Conservation Engineering and Cross-Slope Terracing in Mexico
  • 批准号:
    1031676
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.2万
  • 财政年份:
    2010
  • 负责人:
    William Doolittle
  • 依托单位:
海外基金