Stabilizing HIgh-Spin States of Transition Metal Doped Silicon Clusters

该项目的目的是通过掺杂和表面修饰相结合的方法来定制硅团簇的电子和光学性质。最终目标是达到某种程度的理解，在这种程度上，有针对性地控制这些财产将成为可能。这就需要对掺杂硅团簇及其与吸附分子的相互作用以及表面钝化进行基础研究。我们将与研究单位的实验和理论小组密切合作，通过应用X射线光电离和紫外光解离光谱、共振拉曼光谱以及光致发光光谱，解决通过X射线光子能量范围内的这些问题。这些技术将对表面修饰掺杂硅团簇的电子和几何性质产生详细的洞察。

The aim of this project is to tailor the electronic and optical properties of silicon clusters by combining doping and surface modification. The ultimate goal is to arrive at a level of understanding where targeted control of these properties will become feasible. This requires a fundamental investigation of doped silicon clusters and their interaction with adsorbate molecules as well as surface passivation. In close collaboration with experimental and theoretical groups of the research unit we will address these questions across the visible through X-ray photon energy range by applying X-ray photoionization and UV photodissociation spectroscopy, resonant Raman spectroscopy, as well as photoluminescence spectroscopy. These techniques will yield detailed insight into the electronic and geometric properties of surface modified doped silicon clusters.