课题基金 / 基金详情

MRI: Development of an Electron-Beam Deposition System with In Situ Surface Analysis

MRI: Development of an Electron-Beam Deposition System with In Situ Surface Analysis
MRI:开发具有原位表面分析功能的电子束沉积系统
批准号:
0420853
负责人:
Mark Holtz
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-15 至 2007-07-31

项目摘要

项目成果

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中文摘要
翻译
本研究的目的是开发一种超高真空材料沉积和表征系统。该系统将提供TTU目前无法提供的综合沉积和分析能力,大大加强了我们的材料研究和教育工作。这些能力的发展将对NSF资助的许多项目产生直接影响。智力优势:该系统将用于薄膜沉积和表面分析的基础和应用研究。在大带隙材料中,我们最近的工作已经证明了在波长262 nm下工作的紫外led。新的问题是表面化学和金属化对接触形成的影响。随着高介电常数微电子材料的发展,人们对硅栅-介电界面的重要性提出了质疑。我们的纳米工程高能材料依赖于相互扩散反应。为了优化能量储存和释放的结构,需要改进沉积控制和原位表征以研究反应。MOEMS的研究包括微镜的开发和磨损的基础研究。表面表征将促进我们在粘滞和摩擦修复方面的努力,并将我们的MOEMS研究扩展到疲劳和失效。更广泛的影响:该仪器影响了许多正在进行的研究项目,并加强了我们与工业和国家实验室的互动。我们的研究范围很广,跨越了科学和工程的许多领域。TTU纳米技术中心提供了一个跨学科的环境,通过在中心设施内进行的研究和课程,为博士后研究人员和各级学生提供了优秀的技术、团队和领导力建设机会。
英文摘要
The objective of this research is to develop an ultra high vacuum materials deposition and characterization system. The system will provide combined deposition and analysis capabilities not currently available at TTU, significantly enhancing our materials research and educational efforts. Development of these capabilities will have an immediate impact on numerous projects funded by NSF.Intellectual Merit: The system will be used to conduct basic and applied research in thin film deposition and surface analysis. In large bandgap materials, our recent work has demonstrated ultraviolet LEDs operating at wavelength 262 nm. New questions regard the influence of surface chemistry and metallization on contact formation. The development of microelectronic materials with high dielectric constant leads to questions on the importance of silicon gate-dielectric interface. Our nano-engineered energetic materials rely on interdiffusion reactions. To optimize structures for energy storage and release, improvements are needed in control over deposition and in situ characterization to study the reactions. MOEMS research involves micromirror development and basic studies of wear. Surface characterization will advance our efforts in stiction and friction remediation and extend our MOEMS research into of fatigue and failure. Broader Impact: This instrumentation impacts numerous ongoing research projects and enhances our interactions with industry and national laboratories. The scope of our studies is broad, and spans numerous areas in science and engineering. The TTU Nano Tech Center provides an interdisciplinary setting with excellent technical, team, and leadership building opportunities for postdoctoral researchers and students at all levels through research and courses conducted within Center facilities.
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会议论文
Device Processing Studies of Aluminum-Rich AlGaN Superlattices
  • 批准号:
    0323640
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $42.0万
  • 财政年份:
    2003
  • 负责人:
    Mark Holtz
  • 依托单位:
Fundamental Properties of GaAsN and InGaAsN - Toward Optoelectronic Applications
  • 批准号:
    0070240
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $24.0万
  • 财政年份:
    2000
  • 负责人:
    Mark Holtz
  • 依托单位:
Professional Master's Degree in Applied Physics - Internship in Regional Industry
  • 批准号:
    9705498
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $47.8万
  • 财政年份:
    1997
  • 负责人:
    Mark Holtz
  • 依托单位:
国内基金
海外基金
水稻边界发育缺陷突变体abnormal boundary development(abd)的基因克隆与功能分析
Development of a Linear Stochastic Model for Wind Field Reconstruction from Limited Measurement Data
  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    40万元
  • 批准年份:
    2020
  • 负责人:
    Vikrant Gupta
  • 依托单位: