Self-Aligned Nanomanufacturing of Carbon Nanotubes for Nanoelectronics

本项目的研究目标是开发一种能够在较低温度下以可控方式实现碳纳米管（CNTs）自对准生长的方法。具体目标是：1）建立自对准碳纳米管生长的理论模型; 2）发展纳米级光增强和尖端形电极顶端局部加热的方法; 3）在激光照射下实现两个金属电极之间的碳纳米管生长; 4）使用电场控制碳纳米管生长方向; 5）实现半导体和金属碳纳米管的选择性生长;以及6）展示所开发的CNT纳米制造方法的实际应用。该项目将推进发现和理解，同时促进教学，培训和学习，通过研究生和本科生的教育活动与建议的研究相结合。该项目活动将被整合到现有的课程（纳米技术介绍）的研究生和高年级本科生。参加本课程的学生将有机会参观研究设施，并参加实验结果的讨论。这种方法将加强学生对纳米科学和工程基础理论的理解。该项目将吸引不同的学生群体，以鼓励代表性不足的群体继续进行研究生学习。该项目的成功完成将为未来的纳米电子制造奠定基础。所提出的工艺与微电子中使用的当前制造工艺兼容，并且可以用于将CNT器件和互连集成为使用当前半导体制造基础设施制造的集成电路中的关键部件。CNT器件的集成将提高集成密度、电路功能性、功耗和电路速度，而额外的资本投资最少。该项目的成功有可能将基于CNT的纳米电子学转移到一个可行的行业。

The research goal of this project is to develop a methodology that can achieve self-aligned growth of carbon nanotubes (CNTs) in a controllable manner at lower temperature. The specific objectives are to: 1) develop theoretical models for self-aligned CNT growth; 2) develop a method of nanoscale light enhancement and local heating at the apex of tip-shaped electrodes; 3) achieve CNT growth between two metallic electrodes under laser irradiation; 4) use an electrical field to control CNT growth direction; 5) achieve selective growth of semiconducting and metallic CNTs; and 6) demonstrate practical applications of the CNT nanomanufacturing method(s) developed. This project will advance discovery and understanding while promoting teaching, training, and learning through the integration of the proposed research with educational activities for both graduate and undergraduate students. The project activities will be integrated into an existing course (Introduction to Nanotechnology) for graduate and senior undergraduate students. The students enrolled in this course will have an opportunity to visit the research facility and participate in discussions of the experimental results. This approach will strengthen students understanding of basic theories in nanoscale science and engineering. This project will engage a diverse group of students as a way of encouraging underrepresented groups to continue on for postgraduate study. The successful completion of this project will lay a foundation for future nanoelectronics manufacturing. The proposed process is compatible with current manufacturing processes used in microelectronics and can be used to integrate CNT devices and interconnections as key components in integrated circuits fabricated using current semiconductor manufacturing infrastructures. The integration of CNT devices will improve the integration density, circuit functionality, power consumption and circuit speed, with minimum additional capital investment. The success of this project has the potential to transfer CNT-based nanoelectronics to a viable industry.