Third International Symposium on Gas-Phase and Surface Chemistry of Vapor Phase Materials Processing

摘要提案编号：cts -0610181首席研究员：Mark T. swihart机构：SUNY buffalo第三届气相材料加工的气相和表面化学基础国际研讨会的目的是将研究这些工艺（化学气相沉积、干蚀刻、纳米材料的气溶胶合成等）的研究人员聚集在一起，研究各种背景和各种应用。这次研讨会为这些研究人员之间的交流提供了一个独特的场所，否则他们将参加更狭隘地关注特定应用或方法的会议，因此他们将不会接触。例如，在微电子领域工作的研究人员和在其他领域（如硬涂层）研究薄膜沉积的研究人员之间可能有共同的兴趣和相互作用的机会。知识优势：本次研讨会将讨论气相合成和材料加工的最新技术，重点是气相和表面化学及其对生长/蚀刻速率和材料形态和性能的影响。感兴趣的材料包括半导体（元素和化合物）、氧化物、各种形式的碳、金属和以薄膜、块状材料或纳米颗粒的形式加工的陶瓷。感兴趣的过程包括（但不限于）：化学气相沉积（热，快速热，等离子体辅助，光子辅助，离子辅助，粒子辅助等），原子层沉积，气相蚀刻，分子和化学束外延，以及气溶胶合成。特别强调的领域包括气相动力学和表面反应的气相处理材料，包括动力学常数的基本测量，以及在薄膜生长/蚀刻和颗粒合成过程中的原位探测；异质外延和选择性外延过程中的表面和界面化学新的前体和生长/蚀刻化学；量子化学计算预测热化学，机制和速率参数在气相和表面；现场监测和控制材料的组成、形态、应力、电学和光学性质；气-颗粒转化的基本原理和现场监测；CVD过程中的颗粒形成问题；描述气相材料加工过程中发生的动力学和输运现象的模型，特别强调从分子到介观水平（性质）和从介观到宏观水平（过程）的分层模型。更广泛的影响：NSF资金将用于支持研究生和初级教师作为演讲者，海报展示者或与会者参与本次研讨会。将作出特别努力，吸引和支持女性研究人员以及在科学和工程领域代表性不足的少数群体成员。

AbstractProposal Number: CTS-0610181Principal Investigator: Mark T. SwihartInstitution: SUNY BuffaloProposal Title: Third International Symposium on Gas-Phase and Surface Chemistry of Vapor Phase Materials Processing The objective of the Third International Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor Phase Materials Processing is to bring together researchers that are studying such processes (chemical vapor deposition, dry etching, aerosol synthesis of nanomaterials, etc.) in a variety of contexts and for a variety of applications. This symposium provides a unique venue for communication among these researchers who would otherwise attend conferences more narrowly focused on a particular application or methodology, and who therefore would not otherwise come into contact. For example, there are may shared interests and opportunities for cross-fertilization between researchers working in microelectronics and those working on thin film deposition in other contexts, such as hard coatings.Intellectual Merit: This symposium will address the state of the art in vapor-phase synthesis and processing of materials with emphasis on gas-phase and surface chemistry and its effects on growth/etching rates and material morphology and properties. Materials of interest include semiconductors (elemental and compound), oxides, carbon in all forms, metals, and ceramics, processed in the form of thin films, bulk materials, or nanoparticles. Processes of interest include (but are not limited to): chemical vapor deposition (thermal, rapid thermal, plasma-assisted, photon-assisted, ion-assisted, particle-assisted etc.), atomic layer deposition, vapor-phase etching, molecular- and chemical-beam epitaxy, and aerosol synthesis. Particular areas of emphasis include kinetics of gas-phase and surface reactions underlying the vapor-phase processing of materials, including fundamental measurements of kinetic constants as well as in-situ probing during film growth/etching and particle synthesis; surface and interfacial chemistry during heteroepitaxy and selective epitaxy; new precursors and growth/etching chemistries; quantum-chemistry calculations for predicting thermochemistry, mechanisms, and rate parameters in the gas phase and on surfaces; in-situ monitoring and control of materials composition, morphology, stress, electrical, and optical properties; fundamentals and in situ monitoring of gas-to-particle conversion; particle formation issues during CVD; models describing the kinetics and transport phenomena that occur during vapor-phase materials processing, with special emphasis on hierarchical models leading from the molecular to the mesoscopic level (properties) and from the mesoscopic to the macroscopic level (processes).Broader Impacts: NSF funding will be used to support the participation of graduate students and junior faculty in this symposium as speakers, poster presenters, or attendees. Particular efforts will be made to attract and support female researchers and members of minority groups underrepresented in science and engineering.