SBIR Phase I: Infrared Confocal Measurement System

小企业创新研究（SBIR）第一阶段项目将开发一种新的红外测量技术，用于确定微电子机械系统（MEMS）中超薄（0至200微米）和图案硅片的厚度，以及蚀刻特征的深度（最大沟槽深度为150微米）。所提出的仪器是一个彩色共聚焦传感器（根据光的颜色或波长沿轴向扩散聚焦光斑），在近红外光谱中工作，其中硅是透明的。随着超薄晶圆的出现，现有的电容测试技术已经不能满足对晶圆的测量。因此，所提出的仪器将提高硅微电子和MEMS行业所需的测量精度。这种测量技术也具有降低硅基微电子成本的潜力。

The Small Business Innovation Research (SBIR) Phase I project will develop a novel infrared measurement technique for determining the thickness of ultra-thin (0 to 200 microns) and patterned silicon wafers, and the depth of etched features (maximum trench depth of 150 microns) in micro electro-mechanical systems (MEMS). The proposed instrument is a chromatic confocal sensor (spreads a focused spot along the axial direction according to color, or wavelength, of the light) operating in the near infrared spectrum, where silicon is transparent. With the advent of ultra-thin wafers, the present technology of capacitance testing to gage the wafers is no longer adequate. The proposed instrument, therefore, will improve the accuracy of measurements needed in the silicon microelectronics and MEMS industries. This measurement technique also has the potential to reduce the cost of silicon based microelectronics.