SBIR Phase II: Infrared Confocal Measurement System

小企业创新研究（SBIR）第二阶段项目将设计和构建基于近红外（NIR）彩色共聚焦传感器技术的原型测量系统。硅在近红外波段是透明的，因此传感器可以同时测量到晶圆片前后表面的距离。传感器将从背面测量深沟和过孔，因此它们的纵横比无关紧要。提出的创新在于传感器的设计和集成。拟议的测量系统将满足以下半导体行业的需求：1)在晶圆减薄操作期间进行晶圆厚度的原位测量；2)超薄晶圆片的厚度和形状测量；3)测量深，高纵横比，蚀刻沟和通孔在硅。目前还不可能在晶圆减薄期间进行直接的原位测量。许多类型的深蚀刻沟槽和通孔的沟槽深度的无损测量也不是。超薄晶圆（150微米）厚度的测量需要更高的精度和更低的成本。目前的技术不具备在这个较薄范围内测量厚度的分辨率，也没有足够的晶圆上的空间密度来准确描述其形状。

The Small Business Innovation Research (SBIR) Phase II project will design and construct prototype measurement systems based on near infrared (NIR) chromatic confocal sensor technology. Silicon is transparent in the NIR, and thus the sensor measures the distance to the front and back surfaces of the wafer simultaneously. The sensor will measure deep trenches and vias from the back side so that their aspect ratios are of no consequence. The proposed innovations lie in the sensor design and integration.The proposed measurement systems will address the following semiconductor industry needs: 1) in situ wafer thickness measurement during wafer thinning operations; 2) wafer thickness and shape measurements of ultra-thin wafers; and 3) the measurement of deep, high aspect ratio, etched trenches and vias in silicon. Direct, in situ, measurements during wafer thinning are not currently possible. Neither is the nondestructive measurement of trench depth of many types of deep etched trenches and vias. The measurement of the thickness of ultra-thin wafers (150 micron) requires greater accuracy for less cost than is currently available. Present technology does not have the resolution for measuring thickness in this thinner range, nor does it have sufficient spatial density on the wafer to accurately describe its shape.