Preparation and photoelectrochemical properties of nanoporous p-type semiconductor films for dye-sensitized p-n solar cells

染料敏化p型半导体薄膜将朝着制备高效染料敏化p-n太阳能电池的方向发展。选择CuSCN作为p型半导体材料，并将与不同的染料分子一起电沉积，所述染料分子在沉积期间充当结构导向剂并在沉积膜中充当敏化剂。这种方法已经被证明产生纳米多孔膜具有优异的电荷载流子传输性能和光电化学性能的染料敏化的n型薄膜的情况下，基于ZnO。CuSCN /染料膜的光电化学性质，特别是光生载流子的传输和表面动力学，将详细研究频率和时间分辨的光电化学方法。这些测量的结果将与结构和形态特性以及基础制备条件相关。基于这些相关性，将开发和优化制备条件，以产生具有高光电化学性能的薄膜。CuSCN /染料薄膜的优化制备条件将用于通过电沉积制备高效的染料敏化p-n电池，基于p-CuSCN，n-ZnO和具有可以与两种半导体材料相互作用的锚定基团的染料分子。

Dye-sensitzed p-type semiconductor films will be developed towards the preparation of efficient dye-sensitzed p-n solar cells. CuSCN is chosen as p-type semiconductor material and will be electrodeposited together with different dye molecules, which act as structure-directing agents during the deposition and as sensitizers in the deposited films. This method has already been proven to yield nanoporous films with excellent charge carrier transport properties and photoelectrochemical performance in the case of dye-sensitzed n-type films based on ZnO. The photoelectrochemical properties of the CuSCN / dye films, especially transport and surface kinetics of photogenerated charge carriers, will be investigated in detail by frequency- and timeresolved photoelectrochemical methods. The results of these measurements will be correlated with the structural and morphological properties and the underlying preparation conditions. Based on these correlations, the preparation conditions will be developed and optimized to yield films with a high photoelectrochemical performance. The optimized preparation conditions for the CuSCN / dye films will be used to prepare efficient dye-sensitzed p-n cells by electrodeposition, based on p- CuSCN, n-ZnO and dye molecules with anchoring groups that can interact with both semiconductor materials.