Native Defects and Impurities in Zinc Oxide Studied with Optical and Magnetic Resonance Techniques

技术.该项目利用各种光学和磁共振技术来确定两种宽带隙半导体材料氧化锌（ZnO）和氮化铝（AlN）中原子级缺陷的基本行为。五个具体的研究领域是有针对性的，四个在ZnO和一个在AlN。在ZnO中，这些包括氢在氧空位中的捕获，隐藏的氢的释放，涉及Zn空位的缺陷复合物的形成，以及光致电荷态变化的波长依赖性。在AlN中，主要的施主、受主及其简单的配合物将被识别和表征。在ZnO和AlN中的拟议调查强调使用EPR/ENDOR技术来验证特定缺陷复合物的模型。与此同时，将建立与光学反射和发射的相关性。样品修改将包括高温退火和电子辐照。将采用磁共振、光学和电学表征工具;磁共振技术包括电子顺磁共振（EPR）、电子-核双共振（ENDOR）和固态核磁共振（NMR）。光学技术包括光致发光（PL）、光致发光激发（PLE）、拉曼和吸收。温度相关的霍尔效应测量将提供电气信息。非技术性。该项目涉及电子/光子材料科学领域的基础研究问题，具有技术相关性。该项目包括研究生和本科生指导，访问该地区的非博士机构，其中合作PI将进行会谈，并将宽带隙基于电容器的研究实例（包括演示）整合到西弗吉尼亚大学的材料物理课程中。学生将获得各种先进的光谱材料表征技术的宝贵经验。这些学生也有机会通过项目合作者与政府实验室和其他大学的科学家一起工作。这种互动将确保我们的基础研究面向实际应用的一面。在更广泛的范围内，对这些半导体的基本缺陷性质的进一步了解可能会产生重大的社会影响：改进紫外和可见光谱区域的光发射器，更有效和成本效益更高的固态照明，改进的气体传感器，改进的便携式核探测器，氢的吸收，以及新兴的ar-eas-magnetic半导体和自旋电子学。

Technical. This project makes use of a variety of optical and magnetic resonance techniques to determine fundamental behavior of atomic-scale defects in two wide-band-gap semiconducting materials, zinc oxide (ZnO) and aluminum nitride (AlN). Five specific research areas are tar-geted, four in ZnO and one in AlN. In ZnO, these include the trapping of hydrogen in oxygen va-cancies, the release of hidden hydrogen, the formation of defect complexes involving Zn vacan-cies, and the wavelength dependences of photoinduced changes in charge state. In AlN, the pri-mary donors, acceptors, and their simpler complexes will be identified and characterized. The proposed investigations in ZnO and AlN emphasize the use of EPR/ENDOR techniques to iden-tify models of specific defect complexes. At the same time, correlations with optical absorptions and emissions will be established. Sample modifications will include high-temperature anneals and electron irradiations. Magnetic resonance, optical, and electrical characterization tools will be employed; magnetic resonance techniques include electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR), and solid-state nuclear magnetic resonance (NMR). Optical techniques include photoluminescence (PL), photoluminescence excitation (PLE), Raman, and absorption. Temperature-dependent Hall effect measurements will provide electrical information. Non-Technical. The project addresses fundamental research issues in a topical area of elec-tronic/photonic materials science having technological relevance. This project includes graduate and undergraduate student mentoring, visits to non-PhD institutions in the region where the co-PIs will present talks, and the integration of wide-band-gap semiconductor-based research exam-ples (including demonstrations) into the materials physics courses at West Virginia University. Students will gain valuable experience in a wide variety of advanced spectroscopic materials characterization techniques. These students are also provided opportunities, through project col-laborators, to work with scientists at both government labs and other universities. Such interac-tions will ensure a practical applications-oriented side to our fundamental studies. On a broader scale, an increased understanding in the fundamental defect properties of these semiconductors may have significant societal impacts: improved light emitters in the ultraviolet and visible spec-tral regions, more efficient and cost-effective solid-state lighting, improved gas sensors, im-proved scintillators for portable nuclear detectors, photocatalysis of hydrogen, and emerging ar-eas--magnetic semiconductors and spintronics.