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The Challenge of Integrating Magnetic Nanostructures into Functional 3-D Devices

The Challenge of Integrating Magnetic Nanostructures into Functional 3-D Devices
将磁性纳米结构集成到功能 3D 设备中的挑战
批准号:
0823813
负责人:
Vitali Metlushko
金额:
$34.1万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-08-15 至 2012-07-31

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中文摘要
翻译
本研究的目的是探讨三维磁性层的几何形状对磁电子器件性能的影响。目前,大多数磁性纳米结构是磁性纳米结构薄膜和多层结构。未来的关键挑战将是以可靠的方式集成和接触纳米结构的合适技术。真实的器件是真正的三维结构,特别是在接触线的粗糙度和形状影响性能到它们改变操作机制的程度的情况下。在设计阶段必须绝对考虑地形。这种向非平面器件结构的转变需要先进的制造、测试和逼真的3D几何形状建模。该建议的智力价值在于其潜在的影响:这项研究有可能克服CMOS性能,功耗和缩放的限制,并开辟了一种新的方法,以更快的开关时间和更低的功耗电子电路。这种新的磁电子技术可能在不久的将来成为电子元件性能的下一个水平。由于该项目汇集了几个复杂和前沿的跨学科技术和概念,它为学生在纳米制造,理论建模,现代表征和可视化技术方面的培训和教育提供了丰富的环境。 该项目将对课程开发、代表性不足群体的参与、基础设施的改善以及对K-12年级(芝加哥市中心高中和伊利诺伊州数学和科学学院)的广泛推广产生更广泛的影响,其复杂程度目前是许多市中心学校无法企及的。
英文摘要
The objective of this research is to investigate the influence of 3-D magnetic layer geometry on the performance of magneto-electronic devices. Most magnetic nano-structures today are ultrathin or nanostructured films and multilayers. The key challenge for the future will be a suitable technology to integrate and to contact nanostructures in a reliable manner. Real devices are truly 3-dimensional structures, particularly where the roughness and shape of the contact lines influences a performance to such an extent that they modify the mechanism of operation. The topography must absolutely be taken into consideration during the design phase. This move towards non-flat device structures requires advanced fabrication, testing, and modeling in realistic 3-D geometries. The intellectual merit of this proposal lies in its potential impact: this research has the potential to overcome the limits of CMOS performance, power dissipation and scaling, and open a new approach to electronic circuitry with faster switching time and lower power consumption. This new magneto-electronics could be the next level of performance for electronic components in the near future. Since this project brings together several sophisticated and forefront interdisciplinary techniques and concepts, it provides a rich environment for training and education of students in nano-fabrication, theoretical modeling, and modern characterization and visualization techniques. The project will have a broader impact on curriculum development, involvement of underrepresented groups, infrastructure enhancement, and broad outreach to grades K-12 (Chicago inner-city high-schools and the Illinois Mathematics and Science Academy) at a level of sophistication currently beyond the reach of many inner-city schools.
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Antidot and Ring Arrays for Magnetic Storage Applications
  • 批准号:
    0202780
  • 项目类别:
    Standard Grant
  • 资助金额:
    $23.79万
  • 财政年份:
    2002
  • 负责人:
    Vitali Metlushko
  • 依托单位:
海外基金