Photonically-triggered SiC-GaN and Superjunction based High-gain, High-temperature, and High-voltage Bipolar Power Transistor

项目目标是：1）实现高增益、高压、高温的SiC-GaN-OGBT单片结构（光选通双极晶体管）使用低功率短波长光子源以非锁存方式触发; 2）通过使用GaN-SiC异质结结构优化光吸收效率来降低光子触发功率; 3）使用局部电荷补偿和电导率调制来降低OGBT传导压降; 4）实验特性。智力优势：OGBT的发射极和基极由GaN制成，集电极由SiC制成，从而实现了光学效率，并保持了SiC的优良击穿电压和温度特性。OGBT消除了绝缘栅器件高温下的氧化层可靠性问题和击穿电压限制。基于N型SiC衬底的OGBT结构避免了N沟道SiC IGBT所需的P型衬底不可用的问题。OGBT的光学触发消除了N衬底SiC IGBT的负栅极偏置参考需求。SiC-GaN-OGBT中基于超结的电荷补偿技术产生了高的阻断电压和低的正向导通压降。拟议的工作探讨欧姆接触的问题，连接N-GaN的P-SiC和异质外延生长的GaN在SiC上。OGBT对高功率、高温和高频功率系统具有影响，由于光学隔离、EMI和寄生噪声免疫、器件应力减轻以及光子和宽带隙器件结构的协同集成，OGBT具有增强的可靠性。更广泛的影响：广泛的应用包括光传飞行、电动船、电动/混合动力汽车、电信、航天器、FACT、脉冲功率和微波功率放大器。研究结果将整合到2门本科/研究生课程中。该项目将支持1个博士学位。学生，旨在纳入，每年，4名高级设计和本科研究生（包括2名代表不足和1名荣誉角色的学生），和1名中学生。

Project objectives are 1) Realizing a high-gain, high-voltage and high-temperature monolithic SiC-GaN-OGBT (optically-gated bipolar transistor) triggered in a non-latched manner using a low-power short-wavelength photonic source; 2) Reducing photonic-triggering power by optimization of optical-absorption efficiency using a GaN-SiC heterojunction structure; 3) Reducing OGBT conduction drop using localized charge-compensation and conductivity modulation; 4) Experimental characterizations.Intellectual Merit:The emitter and base of the OGBT are made of GaN while the collector is made of SiC, thus achieving optical efficiency and retaining excellent breakdown voltage and temperature characteristics of SiC. OGBT eliminates oxide-reliability problem at high temperature and breakdown-voltage limitation in insulated-gate devices. N-type SiC substrate-based OGBT structure circumvents the problem of unavailability of P-type substrate required for N-channel SiC IGBTs. Optical triggering of OGBT eliminates negative-gate-bias referencing need for N-substrate SiC IGBT. Superjunction-based charge-compensation technique in SiC-GaN-OGBT yields high blocking voltage and low forward-conduction drop. Proposed work explores ohmic-contact issues for connecting N-GaN to P-SiC and hetero-epitaxial growth of GaN on SiC. OGBT has implications for high-power, high-temperature, and high-frequency power system with enhanced reliability due to optical isolation, EMI and parasitic-noise immunity, device stress mitigation, and synergistic integration of photonic and wide-bandgap device structures. Broader Impacts:Broad applications include fly-by-light, electric ship, electric/hybrid vehicles, telecommunication, spacecrafts, FACTs, pulsed power, and microwave power amplifiers. The results of the research will be integrated into 2 undergraduate/graduate courses. The project will support 1 Ph.D. student and aims to incorporate, per year, 4 senior-design and undergraduate-research students (including 2 under-represented and 1 honor-role student), and 1 middle-school student.