Novel Optically-Activated High-Voltage and Single-Bias Wide-Bandgap High-Frequency Thyristor for Next-Generation Smart Grid

用于下一代智能电网的新型光激活高压单偏压宽带隙高频晶闸管

• 批准号: 1202384
• 负责人: Sudip Mazumder
• 金额: $ 31.56万
• 依托单位: University of Illinois at Chicago
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-10-01 至 2017-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1202384&HistoricalAwards=false
• 关键词: Novel; Optically; Activated; Voltage; Single

Research Objectives and Approaches:The objectives of this project are as follows: 1) To realize and optimize a high-gain, high voltage (HV) (10 kV, 35 A), and high-temperature SiC Integrated Thyristor, which is triggered in a non-latched manner using a very low power and short-wavelength single monochromatic photonic source by hybrid integration; 2) To reduce the optical-triggering power requirement of the SiC-based Integrated Thyristor by optimization of optical-absorption efficiency, lifetime control, and localized photogeneration-recombination process; and 3) Experimental characterizations of the fabricated prototype device for performance validation.Intellectual Merit:The novel all-optical and single-bias (i.e. only the power bias) SiC Integrated Thyristor improves upon all core all-electrical multi-bias HV integrated thyristors including ETO/IGCT/MTO. Further, the Integrated Thyristor also provides a superior solution to the state-of-the-art SiC DMOSFET and SiC IGBT for the HV power systems in multiple aspects. The bipolar device provides numerous device and system level advantages with regard to response time and switching frequency, reliability, ease of triggering, on-state drop, current and voltage scalabilities, fabrication, thermal conductivity, electromagnetic-interference immunity, electrical isolation, and energy-conversion efficiency.Broader Impacts:The impact of the HV SiC Integrated Thyristor is expected to be radical with applications including direct-grid-interface solar, wind, fuel-cell inverters, energy-storage systems, FACTS, power-quality conditioners, HVDC systems, motor drives, solid-state transformers, fault-current limiters, and pulsed-power systems. The proposed project will provide doctoral education to a Ph.D. researcher. Further, multiple undergraduate (including minority) students and middle-school students will be provided research/educational opportunities. Results of the research will be integrated into an undergraduate and a graduate course at UIC.

研究目标和方法：本课题的研究目标如下：1）实现并优化一种高增益、高电压（HV）（10 kV，35 A）和高温SiC集成晶闸管，其通过混合集成使用非常低功率和短波长的单单色光子源以非锁存方式触发; 2）通过优化光吸收效率、寿命控制和局域光生复合过程来降低SiC基集成晶闸管的光触发功率要求;（3）制作的原型器件的性能验证的实验表征。智力优点：新的全光和单偏置（即只有功率偏置）SiC集成晶闸管改进了所有核心的全电多偏置高压集成晶闸管，包括ETO/IGCT/MTO。此外，集成晶闸管还在多个方面为高压电力系统提供了优于最先进的SiC DMOSFET和SiC IGBT的上级解决方案。双极型器件在响应时间和开关频率、可靠性、易触发性、通态压降、电流和电压可缩放性、制造、导热性、抗电磁干扰性、电隔离和能量转换效率等方面具有众多器件和系统级优势。HV SiC集成晶闸管的影响预计将是激进的应用，包括直接电网接口太阳能，风能，燃料电池逆变器，储能系统，FACTS，电能质量调节器、HVDC系统、电机驱动器、固态变压器、故障电流限制器和脉冲功率系统。拟议的项目将为博士提供博士教育。研究员此外，将为多名本科生（包括少数民族）和中学生提供研究/教育机会。研究结果将纳入UIC的本科和研究生课程。