MRI: Acquisition of a Molecular Beam Epitaxy System for Nano-Engineered AlGaInN Optoelectronic Devices: Research, Training, and Education
MRI: Acquisition of a Molecular Beam Epitaxy System for Nano-Engineered AlGaInN Optoelectronic Devices: Research, Training, and Education
批准号:
0923013
负责人:
Sergey Nikishin
金额:
$64.65万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-09-15 至 2012-08-31
中文摘要
我们建议获得一个等离子体辅助分子束外延(PAMBE)系统。最先进的晶体生长系统将使用等离子体产生的活性氮气来大大减少关键杂质的存在。该系统将使一大批跨学科的研究人员受益,其中包括来自学术界和工业界的合作者。PAMBE系统将成为我们广泛实验室的焦点,为基于III族氮化物(III-N)半导体的新型光电子器件开辟新的前沿。它将使正在进行的项目受益,并支持基于Inn、In-丰富的InGaN和Alinn的新的和变革性的研究和教育努力。我们将开发含有低浓度有害杂质的本征III-N材料,特别是碳、氧和氢。具有低蒸汽压的源将有助于为故意使用兴奋剂的实验维护原始的生长环境。新系统将开辟III-N材料研究的新领域,具有许多应用,包括:深紫外光发光二极管、用于无标签的生物FET、便携式DNA传感器、基于异质结构的场效应晶体管和串联光伏电池。光电子材料的研究对我国国民经济具有巨大的潜在效益,例如高效固态工业和家用照明光源的开发有望实现巨大的节能,并在生物、化学和环境传感方面的应用,满足当前和预期的国家安全需求。PAMBE设备将影响正在进行的跨学科研究,并将加强我们与行业以及其他大学和学院的互动。研究、教育和培训融为一体,为学生提供卓越的技术、团队和领导力培养机会。
英文摘要
We propose the acquisition of a plasma-assisted molecular beam epitaxy (PAMBE) system. The state-of-the-art crystal growth system will use plasma-generated active nitrogen to greatly reduce the presence of critical impurities. The system will benefit a large, interdisciplinary group of researchers including collaborators from academia and industry. The PAMBE system will become a focal point of our extensive laboratory, opening new frontiers for novel optoelectronic devices based on group-III-Nitride (III-N) semiconductors. It will benefit ongoing projects and anchor new and transformative research and education efforts based on InN, In-rich InGaN, and AlInN. We will develop intrinsic III-N materials with low concentrations of unwanted impurities, specifically carbon, oxygen, and hydrogen. Sources with low vapor pressure will facilitate maintenance of a pristine growth environment for intentional doping experiments. The new system will open new areas of III-N materials research with numerous applications including: deep ultraviolet light emitting diodes, BioFETs for use in tag-free, portable DNA sensors, heterostructure-based field effect transistors, and tandem photovoltaic cells. Research in optoelectronic materials has tremendous potential benefit for our national economy such as development of efficient solid-state industrial and domestic lighting sources promises enormous energy savings, and applications in biological, chemical, and environmental sensing, addressing present and anticipated national security needs. The PAMBE apparatus will impact ongoing interdisciplinary research and will enhance our interactions with industry as well as other universities and colleges. Research, education, and training are an integrated to provide excellent technical, team, and leadership building opportunities for students.
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Collaborative Research: Vertical GaN Nanostructures on Silicon Fins for Power Electronics and Future Integration with Silicon Technology
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批准号:1028791
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项目类别:Standard Grant
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资助金额:$21.0万
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财政年份:2010
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负责人:Sergey Nikishin
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依托单位:
ANN NIRT: GOALI : Nano-Engineering Efficient Optoelectronic Devices
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批准号:0609416
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项目类别:Standard Grant
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资助金额:$100.0万
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财政年份:2006
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负责人:Sergey Nikishin
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依托单位:
海外基金