SBIR Phase I: A Novel Memory Having Both Volatile and Non-Volatile Modes For High Performance, Low Power Applications

这个小企业创新研究（SBIR）第一阶段项目旨在开发一种具有易失性和非易失性功能的新型存储器。这种存储器结合了非易失性存储器？在没有电源的情况下保留信息的能力（如闪存）和易失性存储器（如静态随机存取存储器（SRAM））的快速存取速度和可靠性。这种存储器采用主流或接近生产的制造工艺制造，是一种单晶体管器件，这导致电池尺寸紧凑，适合经济高效的高密度应用。所提出的存储单元集成了浮体晶体管和相变存储元件。在正常工作状态下，存储器件作为浮动体存储器件，具有类似sram的性能，如访问速度、功率和持久能力。当从存储装置上取下电源时，通过大量并行自反馈机制将浮体的状态保存到相变存储元件中。随后的动力恢复，浮体的原始状态恢复，也是通过一个质量，平行，自反馈机制。这个项目更广泛的影响/商业潜力是使节能计算应用程序和移动设备成为可能。例如，它可以用于降低数据中心的功耗。数据中心?每年的能源消耗估计为1500亿千瓦时，大约是目前美国太阳能电池板容量的两倍。像本提案中提出的这种节能内存可以减少整个数据中心？功耗高达75%。另一个应用是提供集成内存解决方案。许多电子设备目前采用多种类型的存储器，由于他们自己独特的特点。所提出的器件将能够将不同类型的存储器组合成一个单一的存储器器件。

This Small Business Innovation Research (SBIR) Phase I project seeks to develop a novel memory, which has both volatile and non-volatile functionality. Such memory combines the non-volatile memory?s ability to retain information in the absence of power (such as Flash memory) and the fast access speed and reliability of a volatile memory (such as Static Random Access Memory (SRAM)). This memory is fabricated using a mainstream or near-production fabrication process and is a one-transistor device, which results in a compact cell size, suitable for cost-efficient high density applications. The proposed memory cell integrates a floating body transistor and a phase change memory element. During normal operation, the memory device functions as a floating body memory device and has SRAM-like performance, as in the access speed, power, and endurance capability. When power is removed from the memory device, the state of the floating body is saved into the phase change memory element by means of a mass, parallel, self-feedback mechanism. Subsequent to power restore, the original state of the floating body is recovered, also by means of a mass, parallel, self-feedback mechanism.The broader impact/commercial potential of this project is to enable power-efficient computing applications and mobile devices. For example, it can be used to reduce power consumptions in data centers. Data centers? annual energy consumption is estimated to be 150 billion kWh, about twice the capacity of the current US solar panel. A power-efficient memory such as the one proposed in this proposal can reduce the overall data centers? power consumption by up to 75%. Another application is to provide an integrated memory solution. Many electronic devices currently employ multiple types of memory, due to their own distinct characteristics. The proposed device will be able to combine the different types of memory into a single memory device.