Single-Electron Mediated Charge, Spin and Lattice Interactions in Oxide Nanostructures

非技术描述他的研究项目将有助于提供对一种新的基于氧化物的系统的物理理解，该系统能够在接近原子之间距离的尺度上存储和传感信息。使用一种类似于常年玩具“蚀刻素描”的技术，人们正在创造用单电子工作的设备。这些设备以非常高的密度存储信息，而且它们也被预测为力和电荷的超灵敏传感器。一旦正确理解这种组合的灵敏度，就可以用来开发新类型的设备和技术。与研究目标相一致的是指导策略，帮助本科生学习量子力学等高级(但必要的)学科。针对未被充分代表的群体的指导策略也正在为本科生和研究生进行。技术人员他的研究项目将确定和开发氧化物纳米结构中电子电荷、自旋和纳米机械自由度之间的新耦合。这项研究集中在最近开发的铁电草图基单电子晶体管(SketchSET)。进入SketchSET的共振隧穿被SrTiO_3中的铁电极化所改变，从而实现了铁电极化(或应变)状态的超灵敏电子读出。初步实验正在进一步表征SketchSET器件，并帮助定义写入参数、充电能量和隧道势垒之间的关系。形成SketchSET的二维限制势V(x，y)正在使用低温原子力显微镜(AFM)绘制。纳米机械耦合也正在利用压电效应和逆压电效应进行研究。随后的实验耦合了放置在SketchSET上的纳米级机械物体(例如，C60分子或纳米晶体量子点)，并通过非弹性隧道实验研究了与声子模的耦合。在低温和强磁场(50mK/9T)下研究自旋电子效应，目的是研究自旋弛豫时间，并测量这些系统在基于自旋的量子信息平台上的适用性。正在对SketchSet的近藤制度进行研究，长期目标是创建定域和离域自旋系统的人工网络。研究生正在接受先进技术方面的广泛培训，包括样品处理、扫描探针显微镜和低温磁传输。

NON-TECHNICAL DESCRIPTIONThis research project will help provide physical understanding of a new oxide-based system capable of information storage and sensing at scales approaching the distance between atoms. Using a technique analogous to the perennial toy "etch-a-sketch", devices that operate with single electrons are being created. These devices store information at very high densities, and they are also predicted to be ultrasensitive sensors of both force and charge. The combined sensitivity, once understood properly, can be used to develop new types of devices and technologies. Aligned with the research goals are mentoring strategies for helping undergraduates learn advanced (but essential) subjects such as quantum mechanics. Mentoring strategies for underrepresented groups are also being pursued for both undergraduate and graduate students.TECHNICAL DETAILSThis research project will identify and develop novel couplings between electron charge, spin, and nanomechanical degrees of freedom in oxide nanostructures. The research centers on a recently developed ferroelectric sketch-based single-electron transistor ("SketchSET"). Resonant tunneling into the SketchSET is modified by the ferroelectric polarization in SrTiO3, enabling an ultrasensitive electronic readout of the ferroelectric polarization (or strain) state. Initial experiments are further characterizing the SketchSET devices, and helping to define the relationship between writing parameters, charging energies, and tunnel barriers. The two-dimensional confining potential V(x,y) that forms the SketchSET are being mapped using a cryogenic atomic force microscope (AFM). Nanomechanical coupling is also being investigated using the piezoelectric and inverse-piezoelectric effects. Subsequent experiments couple a nanoscale mechanical object (e.g., C60 molecule or nanocrystalline quantum dot) placed atop the SketchSET and investigate coupling to phonon modes through inelastic tunneling experiments. Spintronic effects are being investigated at low temperature and high magnetic fields (50 mK/9T), with the purpose of investigating spin relaxation times and gauging the applicability of these systems for spin-based quantum information platforms. The Kondo regime for SketchSETs are being investigated, with a longer-term goal of creating artificial networks of localized and delocalized spin systems. Graduate students are receiving broad-based training in advanced techniques including sample processing, scanning probe microscopy and low-temperature magneto-transport.