Correlation between the atomic structure and electronic states in resistively switching oxides (A02)

A2项目旨在阐明和量化重复VC开关过程中电子和原子结构的空间变化，以确定专用二元和三元氧化物电池的微观开关和失效机制。基于这些知识，我们将制定策略，通过合理的材料设计和定制加工条件的使用来提高VCM电池的可靠性。通过在第二个SFB周期（8W, C8W，丝状，面积依赖）中确定具有不同开关模式的工程单元，我们的目标是克服当前丝状记忆单元的限制权衡。

Project A2 aims for the elucidation and quantification of spatial changes in the electronic and atomic structure taking place during repeated VC switching in order to determine the microscopic switching and failure mechanisms in dedicated binary and ternary oxide cells. Based on this knowledge, we will develop strategies to improve the reliability of VCM cells by rational materials design and the use of tailored pro-cessing conditions. By engineering cells with different switching modes identified in the second SFB peri-od (8W, C8W, filamentary, area-dependent), we are aiming to overcome the limiting trade-offs of current filamentary memory cells.