Investigating the influence of defects on charge carrier properties in resistive switching with near-field optical microscopy and spectroscopy (B05)

B5项目的目标是对电开关器件和两种材料(PCM和VCM)的导电性质进行纳米级成像，以了解限制其可靠性和可扩展性的与缺陷相关的基本机制。具体地说，我们采用了红外散射型近场光学显微镜的成像方法(S-SNOM)，以获得纳米级分辨率的缺陷或切换区附近的局部电荷载流子密度的定量信息。除了电开关器件中的灯丝和位错的原位成像外，我们还将解决化学合成纳米颗粒的基本材料和生长问题。

Project B5 aims on the nanoscale imaging of conduction properties in electrical switching devices and materials of both types (PCM and VCM) in order to understand the fundamental defect-related mecha-nisms limiting their reliability and scalability. Specifically, we employ the imaging method of infrared scat-tering-type near-field optical microcopy (s-SNOM) to get quantitative information on the local charge car-rier density in the proximity of defects or switched areas at nanoscale resolution. Besides the in situ im-aging of filaments and dislocations in electrical switching devices, we will also address fundamental mate-rial and growth questions on chemically synthesized nanoparticles.